Samsung Electronics Co., Ltd.

Hong-Hyun Park

Woosung Choi

Zhengping Jiang

Chihak Ahn

Hesameddin Ilatikhameneh

A method of manufacturing a p-type MOSFET includes depositing a channel material to form a channel region, forming a source region and a drain region on each side of the channel region along a first direction, depositing a gate oxide layer on the channel region along a second direction crossing the first direction, and depositing a gate electrode on the gate oxide. The channel material includes a group IV element or III-V semiconductor compound and have a diamond or zincblende cubic crystal structure. A &#x3c;001&#x3e; direction of the crystal structure is parallel to the second direction. Two adjacent atoms on an out-most atomic layer of the channel region along the first direction are connected to each other via a single intervening atom, and an interface between the gate oxide layer and the channel region has a surface roughness of 1 angstrom or lower.

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Fremont, CA, United States of America

Hong-Hyun Park