Samsung Electronics Co., Ltd.

Other

Hong Hyun Kim

Kilho Lee

Seung Pil Ko

Junghoon Bak

Hyunchul Shin

Jun U Kim

Jin Weon Kim

The present invention provides a data management system. More specifically, the present invention relates to a keyword-based data management system and method for managing and utilizing multiple pieces of data generated when application programs executed in various types of computing apparatuses are used, and improving a management environment. Proposed according to an embodiment of the present invention is a new procedure for selecting a keyword-of-interest storage before an operation of using a computing apparatus, by classifying data used or collected in the past and storing the same in a keyword-of-interest-based storage. Accordingly, a user can easily access collected data associated with his/her interest, which leads the user to systematically manage data in which the user is interested, and delete and dispose of data in which the user is not interested.

Keyword-based data management system and method

Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

Data storage devices and methods of manufacturing the same

A magnetic tunnel junction pattern includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a non-magnetic capping layer that are sequentially stacked on a substrate. A top electrode is disposed on the magnetic tunnel junction pattern. A bit line is disposed on the top electrode. The top electrode comprises a metal nitride pattern in contact with the non-magnetic capping layer and a metal pattern disposed on the metal nitride pattern.

Magnetic memory device

Growing community of inventors

Seoul, South Korea

Hong Hyun Kim