Korea University Research and Business Foundation

Harvard College

Korea Prime Pharm Co., Ltd.

Korea University

Hong-Gyu Park

Jae-Hyuck Choi

Kyoung-Ho Kim

Soon-Hong Kwon

Minsoo Hwang

Min-Soo Hwang

Charles M Lieber

JungMin Lee

Yong-Hoon Chung

Thomas J Kempa

Yoon-Ho Kim

Robert Day

Ki-Wan Yi

Jungkil Kim

Sun-Kyung Kim

Hoon-Sik Cho

Kwang-Seong Kim

You-Sin No

Ha-Reem Kim

Jaepil So

You-Shin No

Hu-Cheol Lee

A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

Photonic crystal device

A photonic crystal laser and a strain measuring device are provided. The photonic crystal laser includes a disk-shaped photonic crystal structure two-dimensionally disposed in a matrix on a disposition plane and a flexible substrate disposed to support the photonic crystal structure and to cover at least a side surface of the photonic crystal structure.

Photonic crystal laser and strain measuring device

A photoelectric semiconductor nanowire device and a method for manufacturing the same. The photoelectric semiconductor nanowire device includes a semiconductor nanowire doped with a dopant of a first conductivity type and including crystal semiconductor segments which include at least one porous semiconductor segment and are connected to opposite ends of the porous semiconductor segment. A first electrode and a second electrode respectively are disposed in the crystal semiconductor segments around the porous semiconductor segment to provide an electrical connection. The crystal semiconductor segment includes a crystal semiconductor, and the porous semiconductor segment includes a porous semiconductor. The semiconductor nanowire provides a current according to the intensity of an external light when the external light is irradiated to the porous semiconductor segment.

Semiconductor nanowire photoelectric device

The present invention generally relates to nanoscale wires, including anisotropic deposition in nanoscale wires. In one set of embodiments, material may be deposited on certain portions of a nanoscale wire, e.g., anisotropically. For example, material may be deposited on a first facet of a crystalline nanoscale wire but not on a second facet. In some cases, additional materials may be deposited thereon, and/or the portions of the nanoscale wire may be removed, e.g., to produce vacant regions within the nanoscale wire, which may contain gas or other species. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires, kits involving such nanoscale wires, or the like.

Anisotropic deposition in nanoscale wires

The present disclosure relates to a nanolaser generator using a transparent graphene electrode, a method for manufacturing the same, and a single nanopillar LED using the same. The nanolaser generator includes a microdisk resonator, a protruding dielectric ring provided to surround a boundary surface of the microdisk resonator, an external dielectric ring provided at an outer side of the microdisk resonator, and a transparent graphene electrode provided at upper surfaces of the microdisk resonator, the protruding dielectric ring and the external dielectric ring. Therefore, the processes required for generating a nanolaser may be reduced by half in comparison to a general technique, and a nanolaser may be generated just with a micro current.

Nanolaser generator using graphene electrode and method for manufacturing the same

The present invention relates to a glycosylated immunoglobulin or a fragment thereof, in which an immunoglobulin variant, comprising one or more amino acid modifications selected from the group consisting of M160N, A195N, T243N, E265N, Y299T, F331T and Q346N, is additionally glycosylated, and a gene encoding the same. Also, the present invention relates to a glycosylated fusion protein formed as a result of linkage of (a) a glycosylated immunoglobulin or a fragment thereof, in which an immunoglobulin variant having a modified amino acid sequence forming one or more Asn-X-Ser/Thr sequences is additionally glycosylated, with (b) at least one biologically active protein or a portion thereof, a gene encoding the same, a recombination expression vector comprising the gene, a host cell transformed or transfected with the recombinant expression vector, and a method of preparing a glycosylated fusion protein comprising culturing the transformant or transfectant and isolating the glycosylated fusion protein from the culture, and a pharmaceutical composition comprising the glycosylated fusion protein thus prepared.

Glycosylated immunoglobulin and immunoadhesin comprising the same

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Seoul, South Korea

Hong-Gyu Park