Other

Brooklyn College Foundation

Hong-En Shen

Fred H Pollak

Gerald Lucovsky

A method and apparatus for determining the characteristics of materials, particularly of semiconductors, semiconductor heterostructures and semiconductor interfaces by the use of photoreflectance, in which monochromatic light and modulated light beam reflected from the sample is detected to produce a d.c. signal and an a.c. signal, whereby the d.c. signal is applied to one input of a computer and the a.c. signal is used with another input of the computer which controls the light intensity of the monochromatic light impinging on the sample to maintain the d.c. signal substantially constant. A stepping motor is preferably utilized for varying the light intensity of the monochromatic light which is controlled by a computer to re-establish rapidly a predetermined d.c. signal established during normalization procedures when the light intensity of the monochromatic light changes, especially during change of its wavelength. Additionally, the modulation frequency of the modulated beam and/or the wavelength of the monochromatic light can also be varied by the computer.

Method and apparatus for determining a material's characteristics by

A method and apparatus for determining the characteristics of materials, particularly of semi-conductors, semi-conductor heterostructures and semi-conductor interfaces by the use of photoreflectance, in which monochromatic light and modulated light beam reflected from the sample is detected to produce a d.c. signal and an a.c. signal, whereby the d.c. signal is applied to one input of a computer and the a.c. signal is used with another input of the computer which controls the light intensity of the monochromatic light impinging on the sample to maintain the d.c. signal substantially constant. A stepping motor is preferably utilized for varying the light intensity of the monochromatic light. Additionally, the modulation frequency of the modulated beam and/or the wavelength of the monochromatic light can also be varied by the computer. Growth conditions of semi-conductor materials as well as information about trap times can be obtained by analyzing the energy band gaps and determining the dependence of the in-phase photoreflectance signal on the pump modulating frequency, respectively.

A method for determining information about properties at interfaces of semi-conductor materials in which a probe bean monochromatic light is directed onto a material sample which is itself electromodulated by a modulated pump beam, whereby the light reflected from the sample is detected to produce a d.c. signal and an a.c. signal, and after normalizing the procedure, the shifts of energy gaps in the band gaps are evaluated to obtain information about at least one externally applied parameter crossing such shift.

Method for determining interface properties of semiconductor materials

A method and apparatus for determining the characteristics of materials, particularly of semi-conductors, semi-conductor heterostructures and semi-conductor interfaces by the use of photoreflectance, in which monochromatic light and an acousto-optically modulated light beam reflected from the sample is detected to produce a d.c. signal and an a.c. signal, whereby the d.c. signal is applied to one input of a computer and the a.c. signal is used with another input of the computer which controls the light intensity of the monochromatic light impinging on the sample to maintain the d.c. signal substantially constant. The modulation frequency of the modulated pump beam and/or the wavelength of the monochromatic light can also be varied by the computer. Information about trap times can be obtained by determining the dependence of the in-phase signal on the pump modulating frequency, respectively.

Growing community of inventors

Eatontown, NJ, United States of America

Hong-En Shen