Taiwan Semiconductor Manufacturing Comp. Ltd.

Hong-Chang Hsieh

Hsin-Chang Lee

Shinn-Sheng Yu

Chia-Jen Chen

Hung-Jui Kuo

Shih-Ming Chang

Wen-Chuan Wang

Chi-Lun Lu

Chang-Cheng Hung

Yen-Bin Huang

Lee-Chih Yeh

Chen-Yuan Hsia

Kai-Chung Liu

A PSM blank and method for forming a PSM using the PSM blank, the PSM blank including a light transmitting portion; an uppermost anti-reflection portion; a photosensitive layer stack on the anti-reflection portion comprising at least two photosensitive layers; wherein each photosensitive layer has a lower radiant energy exposure sensitivity compared to an underlying layer.

Multiple resist layer phase shift mask (PSM) blank and PSM formation method

A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.

Dimension monitoring method and system

A new process for fabricating a phase-shifting photomask is described. A photomask blank is provided comprising a chromium layer overlying a substrate and a resist layer overlying said chromium layer. The resist layer of the photomask blank is exposed to electron-beam energy and developed away whereby a first resist pattern remains. The chromium layer not covered by the first resist pattern is etched away and, simultaneously, the substrate not covered by the first resist pattern is etched into to a depth in namometers of &frac14; the wavelength of the exposure tool whereby a substrate step is formed underlying the first resist pattern. Thereafter, a portion of the first resist pattern is ashed away to leave a second resist pattern smaller than the first resist pattern and exposing portions of the chromium layer underlying the first resist pattern. The exposed portions of the chromium layer not covered by the second resist pattern are etched away whereby portions of the underlying substrate step are exposed. The second resist pattern is removed to complete fabrication of the phase-shifting photomask.

Resolution enhancement method for deep quarter micron technology

Jogs are sometimes needed in lines that are used as wires in integrated circuits. In the prior art, these jogs are introduced by inserting a diagonal segment at the desired location. This type of shape is expensive to generate when electron beam writing is used. In the present invention the problem is solved by forming the jog through a simple lateral sliding of two halves of the line relative to one another. The resulting line pattern has both sharp corners and a central constriction but when it is transferred to photoresist, using standard photolithographic techniques, both the sharp corners and the constriction are no longer present, provided no OPC was applied to that section of the line. The motivation for this is the much lower cost of E-beam drawing for the structure of the present invention relative to structures of the prior art.

OPC method to improve e-beam writing time

Growing community of inventors

Hsin-Chu, Taiwan

Hong-Chang Hsieh