Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Hong Bum Park

Seok Koo Jung

Young Berm Jung

Young Geon Kwon

Seong Kwon Chin

Byeung Ho Kim

Jae Young Park

Hanmei Choi

Seung Hyun Lim

Seong Hoon Jeong

Dong Chan Suh

Kwan Heum Lee

A semiconductor device is provided including a fin active region on a substrate. The fin active region includes a lower region, a middle region, and an upper region. The middle region has lateral surfaces with a slope less steep than the lateral surfaces of the upper region. An isolation region is on a lateral surface of the lower region of the fin active region. A gate electrode structure is provided. A gate dielectric structure having an oxidation oxide layer and a deposition oxide layer, while having a thickness greater than half a width of the upper region of the fin active region is provided. The deposition oxide layer is between the gate electrode structure and the fin active region and the gate electrode structure and the isolation region, and the oxidation oxide layer is between the fin active region and the deposition oxide layer.

Semiconductor devices including gate dielectric structures

Provided is a method of manufacturing a semiconductor device including: forming a gate electrode structure on an active region of a semiconductor substrate; forming recesses in regions positioned on both sides of the gate electrode structure on the active region; performing a pre-treatment on the recesses using an inert gas plasma; growing epitaxial layers for a source and a drain on the pre-treated recesses; and forming a source electrode structure and a drain electrode structure in the epitaxial layers for the source and the drain, respectively. Also provided is a method in which, after an etching process for forming recesses and/or after an etching process for forming a contact hole, an etched surface may be treated with an inert gas plasma before growing an epitaxial layer. Thus, one or two types of plasma treatment may be employed in the method.

Methods of manufacturing semiconductor devices

A method for manufacturing a substrate for a semiconductor package includes the steps of attaching first and second insulation layers which have first surfaces and second surfaces and are formed with conductive layers on the first surfaces, by the medium of a release film which has adhesives attached to both surfaces thereof, such that the second surfaces of the first and second insulation layers face each other; forming first conductive patterns on the first surfaces of the first and second insulation layers by patterning the conductive layers; forming solder masks on the first surfaces of the first and second insulation layers including the first conductive patterns to open portions of the first conductive patterns; and separating the first and second insulation layers from each other by removing the release film.

Method for manufacturing a substrate for a semiconductor package

Substrate for semiconductor package

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Seoul, South Korea

Hong Bum Park