Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hong Bae Park

Tae Jin Park

Jae Hyun Lee

Jin Bum Kim

Kwan Heum Lee

Munhyeon Kim

Jong Han Lee

Sung Man Whang

Chang Woo Noh

Si Hyung Lee

Hyoung Sub Kim

Min Seok Jo

Maria Toledano Lu Que

A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the gate insulation support.

Semiconductor device

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Seoul, South Korea

Hong Bae Park