Cabot Microelectronics Corporation

Cmc Materials, Inc.

Hon Wu Lau

Ke Zhang

Michael L White

Andrew G Haerle

Selvaraj Palanisamy Chinnathambi

Haresh Siriwardane

Tong Li

Lu Tian

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

Chemical-mechanical processing slurry and methods

The invention provides a polishing composition that contains (a) &#x3b1;-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Polishing composition and method for nickel-phosphorous coated memory disks

The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising wet-process silica particles, (b) a water-soluble polymer, (c) an oxidizing agent, (d) a chelating agent, (e) a pH-adjusting agent, and (f) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 7. The invention also provides a method of polishing a substrate, especially a nickel-phosphorus substrate, with the polishing composition.

Polishing composition for edge roll-off improvement

The invention provides a chemical-mechanical polishing composition containing (a) abrasive particles, (b) a polymer, and (c) water, wherein (i) the polymer possesses an overall charge, (ii) the abrasive particles have a zeta potential Zmeasured in the absence of the polymer and the abrasive particles have a zeta potential Zmeasured in the presence of the polymer, wherein the zeta potential Zis a numerical value that is the same sign as the overall charge of the polymer, and (iii) |zeta potential Z|&#x3e;|zeta potential Z|. The invention also provides a method of polishing a substrate with the polishing composition.

Growing community of inventors

Singapore, Singapore

Hon Wu Lau