Nutool, Inc.

Asm Nutool, Inc.

Novellus Systems Incorporated

Applied Materials, Inc.

Ontrak Systems, Inc.

Other

Lam Research Corporation

Memoria, Inc.

Homayoun Talieh

Bulent Mehmet Basol

Cyprian Emeka Uzoh

Douglas W Young

Jalal Ashjaee

Konstantin Volodarsky

Boguslaw Nagorski

Rimma Volodarsky

David E Weldon

Bernard Frey

Hung-Ming Wang

Halit N Yakupoglu

Yuchun Wang

Boris T Govzman

Efrain A Velazquez

Boguslaw A Nagorski

Paul G Lindquist

Jeffrey A Bogart

Tuan Truong

Bernard M Frey

Mukesh Desai

Brett E McGrath

Alex Lurye

Eric Pellish

Boguslaw A Nigorski

Paul Lindquist

Rémi Berson

Disclosed is a system for generating a transcript of a meeting using individual audio recordings of speakers in the meeting. The system obtains an audio recording file from each speaker in the meeting, generates a speaker-specific transcript for each speaker using the audio recording of the corresponding speaker, and merges the speaker-specific transcripts to generate a meeting transcript that includes text of a speech from all speakers in the meeting. As the system generates speaker specific transcripts using speaker-specific (high quality) audio recordings, the need for 'diarization' is removed, the audio quality of recording of each speaker is maximized, leading to virtually lossless recordings, and resulting in an improved transcription quality and analysis.

Transcription and analysis of meeting recordings

A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

Method of forming contact layers on substrates

A method and apparatus for electropolishing a conductive surface of a semiconductor wafer. The apparatus includes a polisher having at least one first electrode and at least one second electrode separated from one another by an isolation region. A moving mechanism rotates the wafer while the conductive surface of the wafer is moved linearly and parallel to a first direction, which varies an exposure of the relative surface areas of the conductive surface to the at least one first electrode and the at least one second electrode.

System and method for electrochemical mechanical polishing

The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.

Electropolishing system and process

The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.

Electrochemical processing of conductive surface

Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Method of making rolling electrical contact to wafer front surface

Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

Apparatus for processing surface of workpiece with small electrodes and surface contacts

An apparatus for electropolishing a conductive layer on a wafer using a solution is disclosed. The apparatus comprises an electrode assembly immersed in the solution configured proximate to the conductive layer having a longitudinal dimension extending to at least a periphery of the wafer, the electrode assembly including an elongated contact electrode configured to receive a potential difference, an isolator adjacent the elongated contact electrode, and an elongated process electrode adjacent the isolator configured to receive the potential difference, a voltage supply is configured to supply the potential difference between the contact electrode and the process electrode to electropolish the conductive layer on the wafer.

System for electropolishing and electrochemical mechanical polishing

A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between conductive surface and an electrode and establishing relative motion between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.

Electrochemical mechanical processing apparatus

An apparatus capable of assisting in controlling an electrolyte flow and an electric field distribution used for processing a substrate is provided. It includes a rigid member having a top surface of a predetermined shape and a bottom surface. The rigid member contains a plurality of channels, each forming a passage from the top surface to the bottom surface, and each allowing the electrolyte and electric field flow therethrough. A pad is attached to the rigid member via a fastener. The pad also allows for electrolyte and electric field flow therethrough to the substrate.

Pad designs and structures for a versatile materials processing apparatus

The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermine area by mechanically polishing the other areas while the conductive material is being applied.

Apparatus for electroprocessing a workpiece surface

Device providing electrical contact to the surface of a semiconductor workpiece during processing

The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.

Method and apparatus for forming an electrical contact with a semiconductor substrate

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San Jose, CA, United States of America

Homayoun Talieh