Globalfoundries Inc.

Advanced Micro Devices Corporation

Holm Geisler

Vivian Ryan

Dirk Breuer

Matthias Lehr

Frank G Kuechenmeister

Dmytro Chumakov

Michael Grillberger

Ehrenfried Zschech

Generally, the subject matter herein relates to detecting the presence of weak BEOL sites in a metallization system. One disclosed method includes performing a lateral force test on a pillar bump formed above a metallization system of a semiconductor chip, which includes contacting the pillar bump with a test probe while moving the test probe at a substantially constant speed that is less than approximately 1 &#x3bc;m/sec along a path that is oriented at a substantially non-zero angle relative to a plane of the metallization system. Furthermore, the test probe is moving substantially away from the metallization system so that a force imposed on the pillar bump by the test probe has an upward component that induces a tensile load on the metallization system. The disclosed method also includes determining a behavioral interaction between the pillar bump and the metallization system during the lateral force test.

Detecting anomalous weak BEOL sites in a metallization system

Generally, the subject matter disclosed herein relates to testing pillar bumps formed on a semiconductor chip so as to detect the presence of anomalous stiff pillar bumps. One illustrative method disclosed herein includes positioning a test probe adjacent to a side of a pillar bump formed above a metallization system of a semiconductor chip, and performing a lateral force test on the pillar bump by contacting the side of the pillar bump with the test probe while moving the test probe at a substantially constant speed that is less than approximately 1 &#x3bc;m/sec.

Detecting anomalous stiff pillar bumps formed above a metallization system

A system for repairing pillar bumps includes a pillar bump repair device that is adapted to form a plurality of strain-relieving notches in a pillar bump that is positioned above a metallization system of a semiconductor chip. The system further includes a pillar bump support device that is adapted to substantially support the pillar bump while the pillar bump repair device is forming each of the plurality of strain-relieving notches.

Repairing anomalous stiff pillar bumps

Generally, the subject matter disclosed herein relates to repairing anomalous stiff pillar bumps that may be detected above a metallization system of a semiconductor chip or wafer. One illustrative method disclosed herein includes, among other things, forming a pillar bump above a metallization system of a semiconductor chip, and forming a plurality of notches in the pillar bump, wherein the plurality of notches are adapted to adjust a flexibility of the pillar bump when the pillar bump is exposed to a lateral force.

The metallization system of complex semiconductor devices may be evaluated in terms of mechanical integrity on the basis of a measurement system and measurement procedures in which individual contact elements, such as metal pillars or solder bumps, are mechanically stimulated, while the response of the metallization system, for instance in the form of directly measured forces, is determined in order to quantitatively evaluate mechanical status of the metallization system. In this manner, the complex material systems and the mutual interactions thereof may be efficiently assessed.

Assessing metal stack integrity in sophisticated semiconductor devices by mechanically stressing die contacts

By digitizing the UFM signal without using a lock-in amplifier, substantially all of the information initially contained in the UFM output signal may be maintained and may then be used for further data processing. Consequently, any type of model or evaluation algorithm may be used without being restricted to a very narrow bandwidth, as is the case in lock-in based techniques. The digitizing is performed on a real-time basis, wherein a complete UFM curve is digitized and stored for each scan position. In this way, quantitative meaningful values for specific surface-related characteristics with a nanometer resolution may be obtained.

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Dresden, Germany

Holm Geisler