Infineon Technologies Ag

Infineon Technologies Austria Ag

Holger Wille

Gernot Langguth

Wolfgang Raberg

Hermann Gruber

Sergio Morini

Karlheinz Mueller

Martin Gruber

Franz Jost

Karl-Heinz Mueller

In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Lateral transmission of signals across a galvanic isolation barrier

A sensor arrangement is provided. The sensor arrangement may include at least one sensor element having a first side and a second side opposite the first side and configured for sensing a magnetic field; and an electrically conductive line, wherein a first portion of the electrically conductive line may be arranged on the first side of the at least one sensor element and a second portion of the electrically conductive line may be arranged on the second side of the at least one sensor element in such a way that if a current is flowing through the electrically conductive line, the current has a first direction in the first portion and a second direction opposite the first direction in the second portion, such that a first magnetic field formed by the current in the first portion and a second magnetic field formed by the current in the second portion may at least partly add constructively at a sensing portion of the at least one sensor element.

Sensor arrangement, circuit arrangement and method of manufacturing a sensor arrangement

An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

Integrated circuit arrangement comprising a pin diode, and production method

A photodetector is formed in a semiconductor body. A hard mask grating is photolithographically formed on a surface of the semiconductor body. The semiconductor body is etched using the hard mask grating as a mask. The etching is performed down to a predetermined depth. An implantation is performed such that an anode or cathode of the photodetector that has been interrupted during the etching is re-formed.

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Neutraubling, Germany

Holger Wille