Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Other

Universitaet Duisburg-essen

Universitaet Duisburg—essen Forsthausweg

Holger Vogt

Andreas Gehner

Heinz Kuck

Gunther Hess

Uwe Paschen

Marco Russ

Uwe Wahl

Piotr Kropelnicki

Wilfried Mokwa

Dirk Weiler

Andreas Goehlich

Frank Hochschulz

Ralf Kersjes

G&uuml;nter Zimmer

Stefan Dreiner

Tobias Kleinfeld

Jochen Bauer

Bernward Mutterlein

Heinz Deiters

Susanne Linnenberg

Erik Verheyen

Andreas Jupe

Dirk Nachrodt

Described is an integrated vertical structure for infrared sensors, Peltier cooling, and thermoelectric generator applications consisting of a thermally insulating layer which is kept at a distance to a substrate by at least two spacers. In addition, the spacers have conductor structures which serve as thermoelectric elements. A method realizes manufacturing the integrated thermoelectric structure, a method realizes the operation of the integrated thermoelectric structure as a detector, a further method realizes the operation of the integrated thermoelectric structure as a thermoelectric generator, and a method realizes the operation of the integrated thermoelectric structure as a thermoelectric Peltier element.

Integrated thermoelectric structure, method for manufacturing an integrated thermoelectric structure, method for operating same as a detector, thermoelectric generator and thermoelectric Peltier element

Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated readout electronics and a metallization structure is provided, the metallization structure including tungsten and being exposed on a surface of the semiconductor substrate. In another step, a sensor layer is deposited onto the surface of the semiconductor substrate, the semiconductor substrate having the integrated readout electronics and the metallization structure being exposed, when depositing the sensor layer, to a temperature which is above a maximum temperature used when generating the integrated readout electronics such that the sensor layer is connected to the integrated readout electronics via the metallization structure.

Integrated sensor structure

The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.

Photodetector, image sensor and method for manufacturing

A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.

Package comprising an electrical circuit

A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.

Diode bolometer and method for producing a diode bolometer

A bolometer includes a membrane, a first spacer and a second spacer, the membrane including resistive and contact layers. At a side facing a foundation, the contact layer has a first contact region at which the first spacer electrically contacts the contact layer, and a second contact region at which the second spacer electrically contacts the contact layer. In this manner, the membrane is kept at a predetermined distance to the foundation. The contact layer is laterally interrupted by a gap, so that the contact layer is subdivided at least into two parts, the first part including the first contact region, and the second part including the second contact region, and no direct connection existing within the contact layer from the first contact region to the second contact region, and the resistive layer being in contact with the first and second parts of the contact layer.

Bolometer and method of producing a bolometer

A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/&#xb0; C.

Thin-film resistor with a layer structure and method for manufacturing a thin-film resistor with a layer structure

Bolometers utilize an organic semiconductor diode layer assembly for temperature measurement. These bolometers are particularly sensitive to the infrared wave range so that they are employable as infrared sensors and may be combined to form one-dimensional sensor rows or two-dimensional microbolometer arrays.

Bolometer

A power MOS element includes a drift region with a doping of a first doping type, a channel region with a doping of a second doping type which is complementary to said first doping type and which borders on said channel region and said drift region, and a source region with a doping of said first doping type, said source region bordering on said channel region. Furthermore, said power MOS element includes a plurality of basically parallel gate trenches which extend to said drift region and which comprise an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are connected by a connecting gate trench, a gate contact only being connected in an electrically conductive way to the active gate trenches via contact holes in said connecting gate trench. For producing, three photolithographic steps are sufficient, which serve to etch said gate trenches and said connecting gate trench, to produce said contact holes for said source region and said channel region as well as for said connecting gate trench, and to finally structure said gate contacts and said source contact. Thus, a flexible layout concept is possible in which said gate contact can also be placed in the middle of or at another location on said power MOS element without additional expenditure. Optionally, without additional process steps, margin terminating structures can be produced parallel to the formation of said active transistor region in the form of circumferential floating rings or of floating field plates.

Power MOS element and method for producing the same

A flow sensor component consists of a diaphragm of monocrystalline silicon, the diaphragm having arranged therein filled slots which are filled with a thermally insulating material and which penetrate the diaphragm from a first main surface to a second main surface thereof. The filled slots defining at least one heating area of the diaphragm provided with at least one heating element and at least one detection area of the diaphragm provided with at least one temperature detection element, the filled slots thermally insulating the heating area and the detection area from one another and surrounding the heating area and the detection area completely.

Flow sensor component

A power MOS element includes a drift region with a doping of a first doping type, a channel region with a doping of a second doping type which is complementary to the first doping type and which borders on the channel region and the drift region, and a source region with a doping of the first doping type, the source region bordering on the channel region. Furthermore, the power MOS element includes a plurality of basically parallel gate trenches which extend to the drift region and which comprise an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are connected by a connecting gate trench, a gate contact only being connected in an electrically conductive way to the active gate trenches via contact holes in the connecting gate trench. For producing, three photolithographic steps are sufficient, which serve to etch the gate trenches and the connecting gate trench, to produce the contact holes for the source region and said channel region as well as for said connecting gate trench, and to finally structure said gate contacts and said source contact. Thus, a flexible layout concept is possible in which the gate contact can also be placed in the middle of or at another location on the power MOS element without additional expenditure.

An illumination device used for the direct illumination of light-sensitive ayers comprises a light source and a pattern generator. The pattern generator includes an optical Schlieren system and an active, matrix-addressable surface light generator. The Schlieren system comprises a Schlieren lens and a projection lens as well as a mirror device, which is arranged between these lenses and which directs light coming from the light source onto the surface of the surface light modulator. A filter device is used for filtering out diffracted light and for permitting undiffracted light to pass from the surface light modulator to the projection lens. The structure to be illuminated is secured in position on a displaceable positioning table. The surface light modulator is addressed such that the non-addressed surface areas thereof correspond to the projection areas of said structure which are to be illuminated.

Growing community of inventors

Muelheim, Germany

Holger Vogt