Danfoss Silicon Power Gmbh

Heraeus Deutschland Gmbh & Co Kg

Holger Ulrich

Ronald Eisele

Frank Osterwald

Jacek Rudzki

Martin Becker

Lars Paulsen

Michael Schäfer

Susanne Klaudia Duch

Andreas Hinrich

Anton Miric

Christian Bachmann

David Benning

Frank Schefuss

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

Process and device for low-temperature pressure sintering

Sintering tool () with a cradle for receiving an electronic subassembly (BG) to be sintered, characterized by at least one support bracket (), arranged at two locations opposite the cradle, for fixing a protective film () covering the electronic subassembly (BG).

Sintering tool and method for sintering an electronic subassembly

Tool () for the lower die of a sintering device, the tool () having a rest () for an electronic subassembly () comprising a circuit carrier, to be sintered, where the rest () is formed from a material with a coefficient of linear expansion that is close to the coefficient of expansion of the circuit carrier of the electronic subassembly ().

Sintering tool for the lower die of a sintering device

One aspect relates to a method for manufacturing a substrate assembly for attachment to an electronic component A substrate is provided with a first side and a second side. A contact material layer is applied to the first side of the substrate. A pre-fixing agent is applied at least to sections of a side of the contact material layer facing away from the substrate.

Method for producing a substrate arrangement, substrate arrangement, and method for connecting a substrate arrangement to an electronic component

A method for manufacturing semiconductor chips () having arranged thereon metallic shaped bodies (), having the following steps: arranging a plurality of metallic shaped bodies () on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (), exhibiting a first connection material () and a second connection material (), and processing the first connection material () for connecting the metallic shaped bodies () to the semiconductor wafer without processing the second connecting material (), wherein the semiconductor chips () are separated either prior to arranging the metallic shaped bodies () on the semiconductor wafer or after processing the first connection material ().

Method for manufacturing semiconductor chips

Sintering device for sintering at least one electronic assembly, having a lower die and an upper die which is slidable towards the lower die, or a lower die which is slidable towards the upper die. The lower die forms a support for the assembly to be sintered and the upper die includes a receptacle for a pressure pad for exerting pressure directed towards the lower die, and a delimitation wall which laterally surrounds the pressure pad. The delimitation wall having an outer delimitation wall and an inner delimitation wall surrounded by the outer delimitation wall, the inner delimitation wall mounted so as to be slidable towards the outer delimitation wall and so as to be slid in the direction of the lower die such that, following the placing of the inner delimitation wall on the lower die, the pressure pad is displaceable in the direction of the lower die.

Sintering device

A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and/or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and/or second component and/or other components of the power semiconductor module, and complete-area sintering of the sinter material.

Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module

The present invention discloses a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

Growing community of inventors

Eisendorf, Germany

Holger Ulrich