Tokyo Electron Limited

Holger Tuitje

Adam Eales Norton

Hanyou Chu

Yan Chen

Fred E Stanke

Xinkang Tian

Ching-Ling Meng

Mihail Mihaylov

Junwei Bao

Abdurrahman Sezginer

Kenneth C Johnson

Qiang Zhao

Ching Ling Meng

Vi Vuong

Shigeru Nagano

Ping Wang

Shifang Li

Jun Pei

Wen Jin

Zheng Yan

Weiwen Xu

Haixing Zou

An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

Normal-incidence in-situ process monitor sensor

An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

Normal-incident in-situ process monitor sensor

Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

Spatially resolved optical emission spectroscopy (OES) in plasma processing

Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Differential acoustic time of flight measurement of temperature of semiconductor substrates

Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

System for in-situ film stack measurement during etching and etch control method

A zoned order sorting filter for a spectrometer in a semiconductor metrology system is disclosed with reduced light dispersion at the zone joints. The order sorting filter comprises optically-transparent layers deposited underneath, or on top of thin-film filter stacks of the order sorting filter zones, wherein the thicknesses of the optically-transparent layers are adjusted such that the total optical lengths traversed by light at a zone joint are substantially equal in zones adjacent the zone joint. A method for wavelength to detector array pixel location calibration of spectrometers is also disclosed, capable of accurately representing the highly localized nonlinearities of the calibration curve in the vicinity of zone joints of an order sorting filter.

Diffraction order sorting filter for optical metrology

Calibration method for optical metrology

Optical metrology tools are matched by obtaining a first set of measured diffraction signals, which was measured using a first optical metrology tool, and a second set of measured diffraction signals, which was measured using a second optical metrology tool. A first spectra-shift offset is generated based on the difference between the first set of measured diffraction signals and the second set of measured diffraction signals. A first noise weighting function for the first optical metrology tool is generated based on measured diffraction signals measured using the first optical metrology tool. A first measured diffraction signal measured using the first optical metrology tool is obtained. A first adjusted diffraction signal is generated by adjusting the first measured diffraction signal using the first spectra-shift offset and the first noise weighting function.

Matching optical metrology tools using spectra enhancement

Optical metrology tools in a fleet of optical metrology tools can be matched using transforms. In particular, a first set of measured diffraction signals is obtained. The first set of measured diffraction signals was measured using a first optical metrology tool from the fleet of optical metrology tools. A second set of measured diffraction signals is obtained. The second set of diffraction signals was measured using a second optical metrology tool from the fleet of optical metrology tools. A reference diffraction signal is obtained. A first transform is generated based on the first set of measured diffraction signals and the reference diffraction signal. A second transform is generated based on the second set of measured diffraction signals and the reference diffraction signal.

Matching optical metrology tools using diffraction signals

Optical metrology tools in a fleet of optical metrology tools can be matched using transforms. In particular, a first set of hypothetical profiles of one or more structures is obtained. The first set of hypothetical profiles was determined based on a first set of measured diffraction signals measured using a first optical metrology tool from the fleet of optical metrology tools. A second set of hypothetical profiles of the structure is obtained. The second set of hypothetical profiles was determined based on a second set of measured diffraction signals measured using a second optical metrology tool from the fleet of optical metrology tools. A reference profile is obtained. A first transform is generated based on the first set of hypothetical profiles and the reference profile. A second transform is generated based on the second set of hypothetical profiles and the reference profile. A first hypothetical profile is obtained, where the first hypothetical profile was determined using the first optical metrology tool. A second hypothetical profile is obtained, where the second hypothetical profile was determined using the second optical metrology tool. The first hypothetical profile is transformed into a first transformed hypothetical profile using the first transform. The second hypothetical profile is transformed into a second transformed hypothetical profile using the second transform.

Matching optical metrology tools using hypothetical profiles

Drift in an optical metrology tool is compensated for by obtaining a first measured diffraction signal and a second measured diffraction signal of a first calibration structure mounted on the optical metrology tool. The first and second measured diffraction signals were measured using the optical metrology tool. The second measured diffraction signal was measured later in time than the first measured diffraction signal. A first drift function is generated based on the difference between the first and second measured diffraction signals. A third measured diffraction signal is obtained of a first structure formed on a first wafer using the optical metrology tool. A first adjusted diffraction signal is generated by adjusting the third measured diffraction signal using the first drift function.

Drift compensation for an optical metrology tool

A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.

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Fremont, CA, United States of America

Holger Tuitje