Carl Zeiss Smt Gmbh

Holger Schmidt

Norbert Wabra

Boris Bittner

Ricarda Schoemer

Sonja Schneider

Toralf Gruner

Thomas Schicketanz

Walter Pauls

Christian Wald

Hendrik Wagner

Matthias Roesch

Rumen Iliew

The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (λ) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Optical element having a coating for influencing heating radiation and optical arrangement

The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (&#x3bb;) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation &#x3b4;of the real part of the first refractive index from 1 is large relative to the absorption coefficient &#xdf;of the first layer material and the deviation &#x3b4;of the real part of the second refractive index from 1 is small relative to the absorption coefficient &#xdf;of the second layer material.

Projection lens for EUV microlithography, film element and method for producing a projection lens comprising a film element

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Aalen, Germany

Holger Schmidt