Infineon Technologies Ag

Holger Rüthing

Anton Mauder

Elmar Falck

Gerhard Miller

Josef Georg Bauer

Hans Joachim Schulze

A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

Growing community of inventors

Munich, Germany

Holger Rüthing