Ams Sensors Germany Gmbh

Holger Pless

Gunter Siess

Gerhard Eilmsteiner

Frederic Roger

Julius Komma

Franz Lechner

Mahmoud Jazayerifar

Markus Buss

Volker Mannheim

Peter Bliem

A monolithic semiconductor chip defines a plurality of subarrays of optical detector regions, wherein each subarray of optical detector regions includes a corresponding plurality of optical detector regions and wherein each subarray of optical detector regions has the same relative spatial arrangement of optical detector regions as each of the other subarrays of optical detector regions. A multi-spectral optical sensor comprises the monolithic semiconductor chip, a plurality of optical filters, and a plurality of lens elements, wherein each optical filter is aligned between a corresponding lens element and a corresponding subarray of optical detector regions such that light which is incident on any one of the lens elements along a direction of incidence converges through the corresponding optical filter onto a corresponding one of the optical detector regions of the corresponding subarray of optical detector regions, which corresponding one of the optical detector regions depends on the direction of incidence. Such a multi-spectral optical sensor may be used to measure spectral information relating to different parts or sectors of a scene captured by an image sensor or a camera. A multi-spectral optical system and an image sensing system are also disclosed which comprise the multi-spectral optical sensor.

Multi-spectral optical sensor and system

An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Integrated radiation sensor

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Munich, Georgia

Holger Pless