Biotronik Se Co. Kg

Freie Universitaet Berlin

Litronik Entwicklungs Gmbh

Freie Universitat Berlin

Litronik Batterietechnologie Gmbh

Holger Lippitz

Ingo Weiss

Bernd Pretzlaff

Christian Müller

Paul Fumagalli

Jens J Paggel

An implant with magnetic field recognition, such as an implant that recognizes fields generated by a magnetic resonance imaging (MRI) device. The implant includes at least one voltage source, at least one control unit, at least one communication coil and an optical structure with a Faraday element. The optical structure includes at least one first and second polarization filters and at least one light detector.

Implant with MRI device recognition

The present disclosure relates to feedthrough contacts for electronic components of the type used in implantable stimulators such as, for example, cardiac pacemakers, ICDs, CRT-Ds, and/or neurostimulators. A feedthrough conductor includes a metallic electrode, wherein a part of the metallic electrode () has a locally enlarged diameter in the region of the passage through an opening () in the component housing (). The ridge () formed as a result exerts pressure onto the elastic sealing material () disposed around the electrode () in a tubular shape, thereby producing a hermetic seal between the electrode surface and the sealing material (), and between the sealing material () and the wall () of the housing opening (). The feedthrough conductor is sealed using an adhesive material () on the outer side of the electronic component.

Feedthrough conductor for electronic components

This invention relates to a semiconductor array having a first semiconducting layer and a second semiconducting layer made of a ferromagnetic material, which is coupled to the first semiconducting layer in such a way that a spin-polarized state of the semiconducting charge carriers is injected into the first semiconducting layer. The second semiconducting layer interacts with charge carriers made available outside of the second semiconducting layer in such a way that a high spin polarization is created in the second semiconducting layer at least 250 Kelvin.

Array of semiconducting layers for spin injection with high efficiency

Growing community of inventors

Berlin, Germany

Holger Lippitz