Infineon Technologies Austria Ag

Infineon Technologies Ag

Holger Kapels

Armin Willmeroth

Anton Mauder

Franz Hirler

Gerald Deboy

Hans-Joachim Schulze

Jenoe Tihanyi

Helmut Strack

Michael Rueb

Carolin Tolksdorf

Frank Dieter Pfirsch

Winfried Kaindl

Robert Plikat

Dieter Silber

A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device

An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Integrated circuit having lateral compensation component

Integrated circuit having vertical compensation component

Integrated circuit having compensation component

A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

System and method for controlling a converter

A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance

A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Semiconductor device with a charge carrier compensation structure and process

A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections.

Switching converter including a rectifier element with nonlinear capacitance

A semiconductor component has a drift path () in a semiconductor body () of a semiconductor chip (). The semiconductor component has an edge area () and a cell area (), which is surrounded by the edge area (). A trench structure (), which surrounds the semiconductor component () in the edge area (), is arranged in the edge area () of the semiconductor component (). At least the trench walls () are covered by an insulation material (). The trench structure () which surrounds the semiconductor component () has overlapping trench zones () with semiconductor material () arranged between them.

Edge termination structure for semiconductor components

The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.

Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method

Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method

A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Growing community of inventors

Holzkirchen, Germany

Holger Kapels