U.S. Philips Corporation

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Fractal-technologies

Holger K Luthje

Margret Harms

Angelika M Bruns

Bernd R Matthiessen

Ursula Convertini

Heinz Dimigen

Hubertus Hubsch

Jochen Brand

Arno Lentfer

Waldemar Gotze

Peter Tummoscheit

Bernd Matthiesen

Thomas Reul

Simone Daaud

Klaus Bewilogua

Rainer Kist

Heinz Dimingen

Friedrich Kuch

A steering device which includes coded microstructures which are provided on the steering shaft and/or on a device that is connected to the steering shaft in a non-positive manner; a sensor which detects the microstructures and outputs associated measuring signals; and an electronic circuit to which the measuring signals of the sensor are fed, and which outputs electronic signals to control the steering is disclosed.

Steering device for vehicles

The present invention relates to a sensor for measuring actual loads acting upon a surface of a mechanical component, wherein as a sensor an amorphous hydrocarbon layer with piezoresistive properties is used, which is preferably doped with at least one metallic and/or non-metallic element and is connected by contacts to a measuring device; the present invention further relates to the use of carbon layers having piezoresistive properties and preferably doped with metallic and/or non-metallic elements as a sensor for load measurements, as well as to a method of measuring actual loads at stressed surfaces of mechanical components, wherein as a measuring sensor an amorphous carbon layer preferably doped with metallic and/or non-metallic elements is used.

Sensor for determining the state of parameters on mechanical components while using amorphous carbon layers having piezoresistive properties

Process for producing layers of cubic boron nitride

The invention relates to a method of manufacturing a mask support (diaphragm) of SiC for radiation lithography masks, in which an SiC layer is deposited at least on one of the two major surfaces of a substrate in the form of a silicon single crystal wafer and the silicon single crystal wafer is removed except at an edge region by means of a selective etching step, the mask support being annealed before or after the selective etching step in an oxidizing atmosphere at a temperature in the range of 200.degree. to 1350.degree. C. for a duration of 2 to 10 h.

Method of manufacturing a mask support of SiC for radiation lithography

A method is set forth of manufacturing a mask for radiation lithography having a mask support and a substrate, on which an absorber layer is provided to be structured according to a desired mask pattern. The absorber layer having a thickness preferably in the range of from 0.2 to 1.2 .mu.m of partly oxidized tungsten having an oxygen content in the range of from 21 to 29 at. % in the layer is deposited on the substrate, preferably by means of cathode sputtering.

Method of manufacturing a mask for radiation lithography

A method of manufacturing a mask support or diaphragm of SiC for X-ray lithography masks is set forth in which a SiC layer is deposited by means of chemical vapor deposition (CVD) on a substrate in the form of a monocrystalline silicon wafer on at least one of the two major surfaces of the monocrystalline silicon wafer, after which the monocrystalline silicon wafer is removed except an edge region in a selective etching step. According to the invention the following processing steps are used:

Method of manufacturing a mask support of sic for x-ray lithography masks

A mask for X-ray lithography is formed of a multilayer diaphragm with a patterned absorber layer on the diaphragm. The diaphragm includes a layer of magnesium and at least one intermediate layer.

Mask with magnesium diaphragm for X-ray lithography

A method of manufacturing a mask for producing patterns in lacquer layers by means of X-ray lithography comprising a diaphragm which is very transparent to the X-ray radiation, is stretched on a frame in a self-supporting manner and which is applied as a thin layer to a substrate in a manner such that it is subjected to tensile stress, while the substrate is then removed as far as a part constituting a frame for the then self-supporting diaphragm.

Method of manufacturing a mask for the production of patterns in lacquer

In a mask for X-ray lithography, in which a pattern of a layer corresponding to the structure to be manufactured and consisting of a material opaque to visible light is applied to a thin diaphragm of a material transparent to X-ray radiation, an adjustment with visible radiation, such as laser light, is made possible using a diaphragm consisting of a material opaque to visible light and using adjustment windows of a material transparent to the visible light of the spectrum through the diaphragm.

Mask for the formation of patterns in lacquer layers by means of X-ray

The manufacture of semiconductor systems by means of radiation lithography requires low-stress masks when it is important to achieve very fine structures. In accordance with the invention, such a mask comprises a carrier of boron-doped silicon, a radiation absorbing pattern consisting of a double layer of different metals, such as molybdenum and tungsten, or a double layer of layers of the same metal, such as molybdenum, which are deposited in a different manner.

Radiation lithography mask and method of manufacturing same

A magnetic field sensor including a substrate supporting a magnetic layer having an easy axis of magnetization is manufactured by depositing the magnetic layer on the substrate in the absence of a magnetic orienting field, producing a structure in the layer in the form of a plurality of parallel equally large strips having an area of approximately 1/4 to 1/30 of the overall area of the magnetic layer, and subsequently subjecting the layer to a tempering process in a magnetic orienting field.

Method of manufacturing a thin-film magnetic field sensor

A thin-layer magnetic field sensor in which a thin magnetic layer which is magnetized in a preferred direction is surrounded by a magnetic HF measuring coil with variable inductance and in which an external magnetic field and the coil axis are aligned so as to be parallel to one of the preferred directions. The sensor comprises a sequence of geometrically structured layers arranged on a substrate, i.e. a structurized metal electrically conducting layer, a dielectric layer, a magnetic layer magnetized in a preferred direction, a further dielectric layer and a further structurized metal electrically conducting layer which forms with the first electrically conducting layer a coil which surrounds the magnetic layer.

Integrated thin layer magnetic field sensor

A method of structuring oxide layers, nitride layers or magnetic layers in such manner that a photolacquer mask is manufactured on a substrate and the layer to be structured is provided by means of cathode sputtering both on the photolacquer mask and on the surfaces of the substrate not covered with lacquer. The substrate is then treated with a solvent attacking the lacquer mask; the mask swells up and the parts of the layer to be structured present thereon are chipped off. In order to stimulate this latter process, a layer is provided below the photolacquer mask on the substrate relative to which photolacquer has a small adhesive capacity and, after providing the layer to be structured, an increase in volume of the lacquer mask is produced by thermal treatment. After the complete removal of the photolacquer mask and the parts of the layer to be structured present thereon, the structured thin layer remains on the substrate as a negative of the pattern of the photolacquer mask.

Method of structuring thin layers

In usual practice, cathodically etched structures typically show either non-etched parts (strong readsorption of sputtered material) or the etched structure shows strong grooves at the edges of the etching mask (strong back-diffusion of sputtered material). With a variation of the working gas pressure an adjustability of the average free path length of the atoms of the sputtered material and hence the adjustability of the quantity of material redeposited on the basis of back-diffusion is obtained. The working gas pressure can hence be adjusted so that the etching time to remove the readsorbed material and the material deposited again by back-diffusion is locally constant and equal etching rates are obtained for all areas of the structure to be etched.

Growing community of inventors

Halstenbek, Germany

Holger K Luthje