Aixtron Ag

Aixtron Se

Holger Jürgensen

Gerhard Karl Strauch

Johannes Käppeler

Michael Heuken

Armin Dadgar

Alois Krost

Gerd Strauch

Oliver Schön

Markus Schwambera

Dietmar Schmitz

Bernd Schottker

Bernd Wachtendorf

Gert Strauch

Harry Protzmann

What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form ABCNMwherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.

Method of growing nitrogenous semiconductor crystal materials

A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.

Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates

The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates

What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form ABCNM, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.

Method and system for semiconductor crystal production with temperature management

The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.

Method for depositing III-V semiconductor layers on a non-III-V substrate

The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

CVD coating device

The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

Method and device for depositing in particular organic layers using organic vapor phase deposition

The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

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Aachen, Germany

Holger Jürgensen