Infineon Technologies Ag

Holger Hüsken

Hans-Joachim Schulze

Anton Mauder

Holger Schulze

Wolfgang Rösner

A semiconductor device includes at least one first contact region of a vertical device between a semiconductor substrate and an electrically conductive structure arranged adjacent to the semiconductor substrate, and at least one second contact region of the vertical device between the semiconductor substrate of the semiconductor device and the electrically conductive structure. The at least one first contact region is arranged adjacent to the at least one second contact region. The electrically conductive structure includes a first electrically conductive material in contact with the semiconductor substrate in an area of the at least one first contact region and a second electrically conductive material in contact with the semiconductor substrate in an area of the at least one second contact region, so that a first contact characteristic within the at least one first contact region differs from a second contact characteristic within the at least one second contact region.

Semiconductor device with different contact regions

A semiconductor device includes at least one ohmic contact region between a semiconductor substrate of the semiconductor device and an electrically conductive structure arranged adjacent to the semiconductor substrate. Further, the semiconductor device includes at least one Schottky contact region between the semiconductor substrate of the semiconductor device and the electrically conductive structure. The at least one ohmic contact region is arranged adjacent to the at least one Schottky contact region. The semiconductor substrate includes a first doping layer arranged adjacent to the electrically conductive structure. An average doping concentration of the surface region of the first doping layer in an area of the at least one ohmic contact region differs from an average doping concentration of the surface region of the first doping layer in an area of the at least one Schottky contact region by less than 10%.

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Munich, Germany

Holger Hüsken