Silicon Microstructures, Inc.

Elmos Semiconductor Ag

Holger Doering

Omar Abed

Justin F Gaynor

Stephen C Terry

Fernando Alfaro

Rainer Cholewa

Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Light shields for catheter sensors

Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

Pressure sensor cap having flow path with dimension variation

Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Manufacturing catheter sensors

Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

Vertical membranes for pressure sensing applications

Pressure sensors having a topside boss and a cavity formed using deep reactive-ion etching (DRIE) or plasma etching. Since the boss is formed on the topside, the boss is aligned to other features on the topside of the pressure sensor, such as a Wheatstone bridge or other circuit elements. Also, since the boss is formed as part of the diaphragm, the boss has a reduced mass and is less susceptible to the effects of gravity and acceleration. These pressure sensors may also have a cavity formed using a DRIE or plasma etch. Use of these etches result in a cavity having edges that are substantially orthogonal to the diaphragm, such that pressure sensor die area is reduced. The use of these etches also permits the use of p-doped wafers, which are compatible with conventional CMOS technologies.

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Sunnyvale, CA, United States of America

Holger Doering