Ramtron International Corporation

Holden Hackbarth

Sanjay Mitra

A test method for ferroelectric memories includes the steps of: functionally testing the ferroelectric memories to determine functional yield; storing the ferroelectric memories for at least eight hours; writing an initial pattern into the ferroelectric memories; baking the ferroelectric memories; reading the initial pattern to determine same state yield; writing an inverse pattern into the ferroelectric memories; reading the inverse pattern to determine opposite state yield; and again writing the initial pattern into the ferroelectric memories. The steps of baking, reading the initial pattern and writing the inverse pattern, and reading the inverse pattern and writing the initial pattern are repeated for a number of test cycles. The ferroelectric memories are baked at a temperature of about 150.degree. C. for a predetermined duration that is incremented with each successive test cycle.

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Colorado Springs, CO, United States of America

Holden Hackbarth