Skhynix Inc.

Korea University Research and Business Foundation

Hokyoon Lee

Il Han Park

Young Pyo Joo

Seon Wook Kim

Da Eun Song

Miseon Han

Jinho Baek

Youngpyo Joo

A memory device includes a data storage region and a spare column remap storage. The data storage region includes a plurality of sub-arrays, and each of the plurality of sub-arrays has a plurality of main columns and a plurality of spare columns. The spare column remap storage includes a plurality of storage units storing column address information of a repaired main column of one of the plurality of sub-arrays and address information of a repaired main column of another of the plurality of sub-arrays into at least one of the plurality of storage units included in the spare column remap storage.

Memory devices having spare column remap storages and methods of remapping column addresses in the memory devices

A memory device includes a data storage region and a spare column remap storage. The data storage region includes a plurality of sub-arrays, each of which has a plurality of main columns and a plurality of spare columns. The spare column remap storage includes a plurality of storage units storing address information of the main columns repaired using the plurality of spare columns. At least one of the plurality of storage units included in the spare column remap storage is provided to store address information of the main column repaired in one of the plurality of sub-arrays and address information of the main column repaired in another of the plurality of sub-arrays.

Memory devices having spare column remap storages

A memory system includes a first memory device, a second memory device, and a controller. The second memory device has a write endurance which is higher than a write endurance of the first memory device. The controller performs an error correction process on original data outputted from a host to generate a codeword including the original data and parity data. The controller separates the codeword into the original data and the parity data to write the separated original data into the first memory device and to write the separated parity data into the second memory device.

Memory systems having extended product lifetime and methods of operating the same

A method for extending the lifetime of a resistive change memory includes generating data and hash candidates by shuffling bit positions of write data with the hash candidates in response to a write request for the resistive change memory, calculating Hamming distances of the generated data and hash candidates from stored data and a stored hash, matching stuck data at a predetermined bit in the resistive change memory with the generated data and hash candidates when the stuck data is at the predetermined bit, and excluding mismatched data and hash candidates that are mismatched with the stuck data among the generated data and hash candidates, finding a data and hash candidate with the shortest Hamming distance among the matched data and hash candidates, and choosing the found data and hash candidate as an encoded data and hash, and storing the encoded data and hash in the resistive change memory.

Growing community of inventors

Icheon-si, South Korea

Hokyoon Lee