Intel Corporation

Hok-Kin Choi

Huey-Chiang Liou

Hai Deng

Vani Thirumala

Robert P Meagley

Wang Yueh

Valery M Dubin

Chin-Chang Cheng

Ting Zhong

Ernisse S Putna

Yongmei Wu

Yueh Wang

Robert M Meagley

Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

Methods and compositions for reducing line wide roughness

Embodiments of techniques for determining the concentrations of one or more acid components of a multiple acid solution are presented herein.

Multiple acid solution characterization

The present description relates to a process for measuring outgas emissions in fabrication chambers used for semiconductors, micromachines and the like. In one embodiment, the invention includes inserting a gas adsorption material into a processing chamber exhaust vent, running a process in the chamber, venting gasses in the chamber through the gas adsorption material, removing the adsorption material from the exhaust vent, and analyzing the adsorption material for gases.

Process for screening outgas emissions in semiconductor processing

Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

Immersion liquids with siloxane polymer for immersion lithography

Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.

Method to assay sacrificial light absorbing materials and spin on glass materials for chemical origin of defectivity

A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.

Preparation of electroless deposition solutions

A Langmuir-Blodgett film may be utilized as a chemically amplified photoresist layer. Langmuir-Blodgett films have highly vertically oriented structures which may be effective in reducing line edge or line width roughness in chemically amplified photoresists.

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San Jose, CA, United States of America

Hok-Kin Choi