Samsung Electronics Co., Ltd.

Hojoon Kim

Bongsoon Lim

Sang-Won Park

Sang-won Shim

Wonbo Shim

A semiconductor memory device includes a substrate, first memory cells that are connected to first word lines extending along a first direction and first bit lines extending along a second direction, over the substrate, first conductive materials that are connected to the first word lines and extend from the first word lines along a third direction perpendicular to the first direction and the second direction, second conductive materials that are connected to the first bit lines and extend along the first direction over the first bit lines, and third conductive materials that are connected to the second conductive materials and extend from the second conductive materials along the third direction.

Growing community of inventors

Hwasung-si, South Korea

Hojoon Kim