Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Hojong Kang

Joowon Park

Tae-wan Lim

Seungmin Song

Hyeong Geun Park

Jongwon Kim

DongUk Kim

Hyunmin Lee

Beomki Park

Yongha Yu

A semiconductor memory device includes a stack structure including gate electrodes vertically stacked on a substrate and a vertical channel part penetrating the gate electrodes, a bit line connected to the vertical channel part, and a plurality of conductive lines connected to the gate electrodes on the stack structure. The conductive lines form a plurality of stacked layers and include first conductive lines and second conductive lines. The number of the first conductive lines disposed at a first level from the substrate is different from the number of the second conductive lines disposed at a second level from the substrate. The first level is different from the second level.

Semiconductor memory devices

A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the conductive pattern, forming a contact hole in the filling insulation layer and adjacent to the conductive pattern, forming an opening in the conductive pattern by removing a portion of the conductive pattern adjacent to the contact hole such that the opening is connected to the contact hole, and forming a contact plug filling the contact hole and the opening. A width of the opening is greater than a width of the contact hole.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Cheongju-si, South Korea

Hojong Kang