Samsung Electronics Co., Ltd.

Hojin Park

Kyunghoon Lee

Sanghyub Kang

Kwangho Kim

Michael Choi

Bumsoo Kim

Jungho Lee

Yoonkyung Choi

Jinchul Lee

San-ho Byun

Junchul Park

Chadong Kim

Hyunkyu Ouh

Hyungjong Ko

Sun-kyu Lee

JinHyuk Jeung

HoSung Roh

A touch analog front-end (AFE) for a touch sensitive screen may include a transmitter configured to charge a touch panel and a receiver configured to sense the touch panel. The receiver may include a charge-to-voltage (C2V) converter configured to convert a change of capacitance received from the touch panel into a voltage signal, a correlated double sampling (CDS) block configured to convert the voltage signal into a differential signal and to sample each of the positive and the negative signals of the differential signal, and an integrator configured to accumulate a difference between the sampled positive and negative signals.

Touch analog front end and touch sensor controller having the same

A touch analog front-end (AFE) and a touch sensor controller (TSC) are provided. The touch AFE includes a transmitter configured to charge a touch panel and a receiver configured to sense the touch panel. The receiver includes a charge-to-voltage (C2V) converter configured to convert an amount of change of capacitance received from the touch panel into a voltage signal, a filter configured to filter a noise from the voltage signal, resulting in a filtered voltage signal, an integrator configured to accumulate the filtered voltage signal, and a polarity detection circuit configured to monitor the filtered voltage signal and to control the integrator to invert a polarity of the filtered voltage signal when it is negative.

Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.

Semiconductor device and body bias method thereof

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Suwon-si, South Korea

Hojin Park