Samsung Electronics Co., Ltd.

Soongsil University

Qualcomm Mems Technologies, Inc.

Lg Electronics Inc.

Industry-University Cooperation Foundation Hanyang University

Hojin Lee

Kwangjin Moon

Fan Zhong

Yi Tao

Jung-Hwan Kim

Un-Byoung Kang

Wonhee Lee

Kyungwook Hwang

Jinnam Kim

Hoonjoo Na

Do Hwan Kim

Tae Hong Min

Nakhyun Kim

Juyoung Kim

Kwang-Chul Choi

Jiwoon Park

Juwan Park

Dongwon Kim

Cheheung Kim

Youngseok Kim

Jooho Lee

Donggyu Lee

Keun Hwi Cho

Junggun You

Young-Geun Park

Hyungjun Jeon

Beomjin Park

Sang Sik Park

Yongchan Kim

Changhyun Park

Junsik Hwang

Pilkyu Kang

Minseung Yoon

Moonsun Shin

Changwoo Jung

Han Wool Park

Keun-Yeong Choi

Yeonsoo Ham

Jaebok Lee

Seokho Ju

Geonwook Yoo

Seungha Oh

Yeonkyung Kim

Hyoukyung Cho

Kyoungmin Park

Moon Sung Kang

Sughyun Sung

Woochul Lee

Jaewon Hwang

Sunghyun Chun

Jiho Seo

DoYoon Kim

Myoung-Sun Lee

Yongjun Hwang

Jongsoo Hong

Ji Hye Shin

Haejung Hwang

Hyeonuk Na

Eun Ah Heo

Inbang Song

Sangyeon Pyo

Byoungwoo Ko

Hanbyul Choi

Jiyong Ha

A semiconductor device includes a substrate having a first and second surface opposite to each other, and an active region on the first surface and defined by a first isolation region; a plurality of active fins on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

Semiconductor device

A driving circuit board includes a driving circuit board includes: a plurality of driving electrode regions on a surface of the driving circuit board; a plurality of driving electrodes symmetrically arranged on the plurality of driving electrode regions; and a driving circuit electrically connected to at least one of the plurality of driving electrodes, wherein the plurality of driving electrodes include at least one dummy electrode that is not connected to the driving circuit.

Driving circuit board, electronic apparatus including driving circuit board, and method of fabricating electronic apparatus

An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.

Electronic device including dielectric layer and method of manufacturing the electronic device

An integrated circuit device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first insulating layer on the first surface of the semiconductor substrate, an electrode landing pad positioned on the first surface of the semiconductor substrate and having a sidewall surrounded by the first insulating layer, a top surface apart from the first surface of the semiconductor substrate, and a bottom surface opposite to the top surface, and a through-electrode configured to penetrate through the semiconductor substrate and contact the top surface of the electrode landing pad, wherein a horizontal width of the top surface of the electrode landing pad is less than a horizontal width of the bottom surface of the electrode landing pad and greater than a horizontal width of a bottom surface of the through-electrode in contact with the top surface of the electrode landing pad.

Integrated circuit device with through-electrode and electrode landing pad, and semiconductor package including the same

Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.

Semiconductor device and method of fabricating the same

A filtration apparatus includes a flow path, a valve provided on the flow path, a first light source configured to emit a first light including ultraviolet (UV) light toward the flow path, a second light source configured to emit a second light including visible light or infrared light toward the flow path, a first optical sensor located out of a path of the first light and the second light, electrodes provided on the flow path, and a processor electrically coupled to the valve, the first light source, the second light source, the first optical sensor, and the electrodes. The processor is configured to alternately operate the first light source and the second light source, receive a first signal from the first optical sensor while the first light source emits the first light, and control the valve and the electrodes to sterilize the flow path based on the first signal.

Filtration apparatus and control method thereof

A semiconductor device includes: an active pattern on a substrate, wherein the active pattern includes a plurality of channel layers stacked on one another; a plurality of source/drain patterns spaced apart from each other in a first direction and disposed on the active pattern, wherein the plurality of source/drain patterns are connected to each other through the plurality of channel layers; and first and second gate electrodes at least partially surrounding the channel layers and extending in a second direction, wherein the second direction intersects the first direction, wherein the active pattern has a first sidewall and a second sidewall that faces the first sidewall, and wherein a first distance between the first sidewall of the active pattern and an outer sidewall of the first gate electrode is different from a second distance between the second sidewall of the active pattern and an outer sidewall of the second gate electrode.

Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device

An air purifier or air conditioner including a filter device. The air purifier includes: a main body: a suction port provided to allow air to flow into the main body; a filter provided in the main body to filter the air suctioned from the suction port and including a frame and a filter body fixed to the frame; an auxiliary filter member separably mounted on the filter; and a locking device provided on the frame of the filter such that the auxiliary filter member is separably mounted on the frame of the filter.

Filter device and air cleaner having the same

A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.

Semiconductor device including through-electrodes

A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.

An Audio/Video (A/V) receiving device may include a display, a Radio Frequency (RF) receiving module configured to receive an RF packet from an A/V transmitting device, the RF receiving module including a plurality of antennas, and a microcomputer configured to obtain a distance between the A/V transmitting device and A/V receiving device and when the obtained distance is changed, display a first message indicating that a number of antennas to be turned among the plurality of antennas is changed according to the change of the distance.

Audio/video receiving device and wireless display system

A semiconductor device includes a substrate having a first surface and a second surface opposite to each other, and having an active region located on the first surface and defined by a first isolation region; a plurality of active fins arranged on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the plurality of active fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the buried conductive wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

A clothes treatment apparatus includes a cabinet; an inner door disposed to be rotatable in a front surface of the cabinet and provided with an opening; an outer door disposed to form a space in which clothes are mounted between a front surface of the inner door and the outer door, the outer door disposed to rotate with respect to the cabinet together with the inner door or with respect to the inner door separately from the inner door; a heating plate disposed on a rear surface of the outer door; a holding device disposed in an upper portion of the space between the inner door and the outer door and formed to hold one end of the clothes; and a pair of clips disposed under the holding device in the space between the inner door and the outer door and formed to hold both sides of the clothes.

Clothes treatment apparatus and control method thereof

Growing community of inventors

Seoul, South Korea

Hojin Lee