Samsung Electronics Co., Ltd.

Sungkyunkwan University

Research & Business Foundation Sungyunkwan University

Hoijoon Kim

Hyeonjin Shin

Kyung-Eun Byun

Taejin Park

Hyoungsub Kim

Wonsik Ahn

Mirine Leem

Yeonchoo Cho

Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

Metal chalcogenide film and method and device for manufacturing the same

A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

Method of forming transition metal dichalcogenide thin film

Growing community of inventors

Daejeon, South Korea

Hoijoon Kim