The Hong Kong University of Science and Technology

Other

Varintelligent (bvi) Limited

Dic Corporation

Nano and Advanced Materials Institute Limited

Hoi Sing Kwok

Vladimir Grigorievich Chigrinov

Man Chit Wong

Abhishek Kumar Srivastava

Man Yu Wong

Zhiguo Meng

Wing Chiu Yip

Jiaxin Sun

Lei Lu

Yuet Wing Li

Fan Fan

Tao Du

Wei Zhou

Yeuk Lung Jacob Ho

Man Chun Tseng

Shuyun Zhao

Martin Schadt

Xiuling Zhu

Valerii Vladimirovich Vashchenko

York Liao

Zhengnan Yuan

Vladimir Markovich Kozenkov

Zhibo Sun

Sergiy I Valyukh

Chunya Wu

Meng Zhang

Cuiling Meng

Elena Karlovna Prudnikova

Evgenii Pavlovich Pozhidaev

Haruyoshi Takatsu

Isa Nishiyama

Wing Yip Lam

Tsz Kin Ho

Yutaka Nagashima

Sayaka Nose

Ben Zhong Tang

Hirokazu Takada

Masanobu Fukuda

Yanqing Lu

Dongli Zhang

Shuang Xie

Wei Hu

Vladimir Kozenkov

Maksym Fedorovich Prodanov

Fei Xu

Anatoli Alexandrovich Murauski

Fei Hong Yu

Shuming Chen

Olena V Vashchenko

Huajun Peng

Iryna V Valyukh

Alexei D Kiselev

Zhi Ye

Chenxiang Zhao

Guijun Li

Evgeny Pavlovich Pozhidaev

Chung Yung Lee

Rongsheng Chen

Ying Ma

Qi Guo

Cheryl Sun

Hua-Jun Peng

Xiangxing Kong

Yue Shi

Mingxiang Wang

Colin T Yeoh

Hai-Feng Li

Wanlong Zhang

Shu Tuen Tang

A ferroelectric liquid crystal (FLC) material for the deformed helix FLC (DHFLC) electro-optical mode devices and shows optimum electro-optical properties including high tilt angle (>38°), and short helix pitch (<120 nm), and spontaneous polarization (>100 nC/cm) comprising at least two components, wherein at least one FLC component is a chiral compound of Formula (I): particularly: wherein Wand Ware chiral groups with polar substituent at chiral centre, A and B are independently N atom or CH groups providing that at least one of A or B is N atom. Other various groups are as defined herein.

Compound and liquid crystal composition

Techniques for using ferroelectric liquid crystals Dammann grating (FLCDG) for light detection and ranging devices are disclosed. In LiDAR devices, accuracy, response time, and cost performance can be limited by some factors, such as laser pulse width, time resolution of a time-to-digital conversion chip, detector bandwidth, shot noise, and time error generated by electronic circuits. A FLCDG-based architecture can improve a LiDAR device, and provide for one-shot capturing due to the high switching speed at very low driving voltage provided by ferroelectric liquid crystals and the equal diffracting ability of Dammann grating.

Ferroelectric liquid crystals Dammann grating for light detection and ranging devices

A composite photoalignment layer for aligning liquid crystal molecules includes: a monomeric material; a photoinitiator or a thermal initiator; and an azo dye material. A method for preparing a composite photoalignment layer for aligning liquid crystal molecules includes: mixing, in solution form, a monomeric material, a photoinitiator or a thermal initiator, and an azo dye material; coating the mixed solution onto a substrate to form a thin film; exposing the thin film to polarized light; and, with a thermal initiator, heating the thin film to polymerize the monomeric material and form a solid thin film.

Composite photoalignment layer

A method for fabricating quantum rods includes: preparing a Cd-precursor; preparing a S-precursor and CdSe seeds; preparing a Zn-precursor; mixing the S-precursor and the CdSe seeds with the Cd-precursor in a reaction mixture; adding the Zn-precursor to the reaction mixture; stopping the reaction; and performing a purification process to obtain the quantum rods.

Method for production of quantum rods with precisely controllable wavelength of emission

A low birefringence ferroelectric liquid crystal (FLC) mixture composed of at least two components shows birefringence in the range 0.05 to 0.14, which is suitable for the modern display and photonic devices. The cell gap can be tuned from 1.5 &#x3bc;m to 4 &#x3bc;m to reduces the fabrication complexity and chromatic distortion by electro-optical modulation. The FLC mixtures can be employed in a wide temperature range. The characteristics of the said FLC mixture can be tuned by tuning the concentration of the constituents of the mixture. The helical pitch of the FLC mixtures can be varied from 100 nm to 10 &#x3bc;m. A smectic tilt angle can be varied between 17&#xb0; to 45&#xb0; and the spontaneous polarization can be tuned over a wide range to meet requirements of different electro-optical modes, and the FLC mixture is applicable for a wide variety of electro-optical effects.

Low birefringence ferroelectric liquid crystal mixtures

A photoaligned quantum rod enhancement film (QREF) includes: a substrate (); a photoalignment layer deposited on the substrate (); and a polymer layer deposited on the photoalignment layer, the polymer layer comprises a plurality of quantum rods, the plurality of quantum rods are configured to emit one or more wavelengths of light in response to pumping light, and are aligned to an alignment axis based on the photoalignment layer.

Photoaligned quantum rod enhancement films

Devices and method of fabrication a liquid crystal electro-optic device which is based on light scattering and diffraction from a multiple domain field-effect liquid crystal configuration are provided. The multiple domains include random liquid crystal alignment directions fabricated by photo-alignment and have sizes ranging from sub-micrometer to several micrometers. The random alignment in the plane can be of two or more directions whereas the pretilt angle can vary between zero and 90&#xb0;. The randomness of the planar directions of the liquid crystal director can be generated by a designed photo mask in combination with uniaxial photo-alignment.

Electrooptic device based on multiple domain scattering effect

Systems and methods for driving a pixel of a liquid crystal pixel array with a driving circuit are provided. An exemplary method includes: providing a data signal (Dm) to a storage element via the first transistor (T); and providing a ramping voltage signal (V) to a gate of a second transistor (T) of the driving circuit to control the on-off status of the second transistor (T); wherein the ramping voltage signal (V) is based on data stored at the storage element; and wherein a duration of an on-state of the second transistor (T) corresponds to a transmitting state for the pixel.

Driving scheme for ferroelectric liquid crystal displays

This disclosure relates generally to the three-dimensional (3D) integrated thin-film transistors (TFTs) with silicon and metal-oxide (MO) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer. The second transistor is vertically stacked on the first transistor, and the first transistor and the second transistor share a gate electrode formed between the silicon active layer and the metal oxide active layer. With these embodiments, the gate electrode corresponds to a top gate of the first transistor and a bottom gate of the second transistor.

Integration of silicon thin-film transistors and metal-oxide thin film transistors

A standing helix ferroelectric liquid crystal display cell includes: two transparent substrates (A,B); a ferroelectric liquid crystal layer () comprising ferroelectric liquid crystals in a standing helix configuration, the ferroelectric liquid crystal layer () being disposed between the two transparent substrates (A,B), the ferroelectric liquid crystals having a helix axis perpendicular to the two substrates (A,B) and chiral smectic liquid crystal helix pitch shorter than a wavelength of a polarized light normally impinging at least one of the two transparent substrates (A,B); and inter-digital electrodes (), disposed in plane with the two transparent substrates (A,B), configured to apply an electric field to the ferroelectric liquid crystal layer () that provides a driving voltage below a critical voltage for helix unwinding.

Standing helix ferroelectric liquid crystal display cell

A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.

Organic-inorganic perovskite materials and optoelectronic devices fabricated by close space sublimation

An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active layer comprising metal-oxide and formed on the substrate, and an impermeable layer over the source and drain regions of the annealed active layer, wherein the annealing resulting in the annealed active layer was performed with the impermeable layer over portions of the active layer corresponding to the source and drain regions, thereby resulting in a reduction of a resistivity of the source and drain regions of the annealed active layer relative to the active layer. In another aspect, a junctionless transistor is provided wherein the entire active area has a low resistivity based on annealing of an active layer including metal oxide while uncovered or at least partially covered with layers of various gas permeability under oxidizing or non-oxidizing conditions.

Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability

Thin film transistors are provided that include a metal oxide active layer with source and drain regions having a reduced resistivity relative to the metal oxide based on doping of the source and drain regions at room temperature. In an aspect, a transistor structure is provided, that includes a substrate, and source and drain regions within a doped active layer having resulted from doping of an active layer comprising metal-oxide and formed on the substrate, wherein the doped active layer was doped at room temperature and without thermal annealing, thereby resulting in a reduction of a resistivity of the source and drain regions of the doped active layer relative to the active layer prior to the doping. In an aspect, the source and drain regions have a resistivity of about 10.0 m&#x3a9;&#xb7;cm after being doped with stable ions and without subsequent activation of the ions via annealing.

Metal oxide thin film transistor with source and drain regions doped at room temperature

An electrically suppressed helix (ESH) ferroelectric liquid crystal (FLC) display cell with fast response includes: a liquid crystal layer, disposed between two transparent substrates, wherein helix pitch of chiral smectic liquid crystals of the liquid crystal layer is less than the thickness of the liquid crystal layer; at least one polarizer; and a voltage source, configured to apply electrical driving voltage pulses to electrodes of the display cell with amplitude greater than a critical voltage for helix unwinding of the chiral smectic liquid crystals.

Field sequential color ferroelectric liquid crystal display cell

Growing community of inventors

Hong Kong, China

Hoi Sing Kwok