Samsung Electronics Co., Ltd.

Hohyeuk Im

Su-Min Park

Jongkook Kim

SeokWon Lee

Jung-Do Lee

Byoungwook Jang

Jaesik Lee

Seok Won Lee

Eunseok Cho

Yoonha Jung

Soojeoung Park

Bona Baek

Sunrak Kim

Gowoon Seong

JongKook Kim

A semiconductor device includes a plurality of semiconductor chips spaced apart from each other. A space region is formed between adjacent semiconductor chips of the plurality of semiconductor chips. A redistribution layer is disposed on at least one of the semiconductor chips. The redistribution layer includes at least one redistribution line electrically connected to the at least one of the semiconductor chip. The redistribution layer includes an interconnection disposed in the space region. The interconnection includes an organic layer disposed on the at least one redistribution line. The organic layer is more flexible than the plurality of semiconductor chips.

Semiconductor device having flexible interconnection and method for fabricating the same

A package substrate and a semiconductor package are provided. The package substrate including a substrate body having a first surface on which a semiconductor chip is mounted and a second surface opposite to the first surface, and a conductive pad at the first surface, the conductive pad elongated in a first direction, the conductive pad including a plurality of sub-bar patterns spaced apart from each other in the first direction may be provided.

Package substrate and semiconductor package including the same

A multi-stepped boat assembly includes a stack boat having at least one stack hole configured to receive a first semiconductor package and a second semiconductor package vertically stacked on the first semiconductor package in the stack hole. A guide boat has at least one guide hole vertically aligned with the at least one stack hole. The guide boat is removably attachable to the stack boat. An inner sidewall of the stack hole includes a first step configured to receive the first semiconductor package, and a second step provided on the first step and configured to receive the second semiconductor package. The guide hole extends toward the stack hole to guide movement of the first semiconductor package to the first step.

Multi-stepped boat assembly for receiving semiconductor packages

Provided is a semiconductor package including a lower package, an interposer on the lower package, and an upper package on the interposer. The lower package may include a lower package substrate, a lower semiconductor chip on the lower package substrate, and a lower heat-transfer layer on the lower semiconductor chip. The interposer may include an interposer substrate, first and second heat-transfer openings defined by recessed bottom and top surfaces, respectively, of the interposer substrate, an upper interposer heat-transfer pad disposed in the second heat-transfer opening, and an upper heat-transfer layer disposed on the upper interposer heat-transfer pad. The upper package may include an upper package substrate, an upper package heat-transfer pad, which may be disposed in a third heat-transfer opening defined by a recessed bottom surface of the upper package substrate, and an upper semiconductor chip disposed on the upper package substrate.

Semiconductor package and method of fabricating the same

Provided are a semiconductor package and a method of fabricating the same. The package substrate includes a hole, which may be used to form a mold layer without any void. The mold layer may be partially removed to expose a lower conductive pattern. Accordingly, it is possible to improve routability of solder balls.

Provided is a semiconductor chip. The semiconductor chip includes a semiconductor substrate including a main chip region and a scribe lane region surrounding the main chip region. An insulating layer is disposed over the semiconductor substrate. A guard ring is disposed in the insulating layer in the scribe lane region. The guard ring surrounds at least a portion of the main chip region. The guard ring has a brittleness greater than a brittleness of the insulating layer.

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Seoul, South Korea

Hohyeuk Im