Samsung Electronics Co., Ltd.

Hoechul Kim

Taeyeong Kim

Hoonjoo Na

Ilyoung Han

Ju-Il Choi

Pil-Kyu Kang

Seokho Kim

Hyungjun Jeon

Jaehyung Park

Seongmin Son

Junhong Min

Hakjun Lee

Jihoon Kang

Nohsung Kwak

Ilhyoung Lee

Jaehyun Phee

A bonding method for bonding a first substrate to a second substrate includes fixing the first substrate to a first surface of a first bonding chuck and fixing the second substrate to a second surface of a second bonding chuck, the second surface facing the first surface; aligning the second bonding chuck above the first bonding chuck in a vertical direction or in a horizontal direction; bonding the first substrate to the second substrate to make a bonded substrate; and wherein, in the bonding the first substrate to the second substrate, injecting a process gas between the first substrate and the second substrate using a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view and injecting an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate using an air curtain generator are performed in combination.

Method of manufacturing semiconductor device

A substrate bonding method and apparatus are described. The substrate bonding apparatus is used to bond a first substrate to a second substrate. The bonding apparatus includes a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the seal.

Substrate bonding apparatus and method of manufacturing semiconductor device by using the same

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

Method of fabricating a semiconductor device

A wafer bonding apparatus including a first stage having a first surface and being configured to hold a first wafer on the first surface; a second stage having a second surface and being configured to hold a second wafer on the second surface facing the first surface; a first target image sensor on an outer portion of the first stage; a second target image sensor on an outer portion of the second stage; and a target portion on the first or second stage, the target portion having a target plate fixedly installed and spaced apart from the first or second target image sensor by a predetermined distance, wherein, in an alignment measurement of the first and second stages, the first and second stages are movable so that the first and second target image sensors face each other and the target plate is between the first and second target image sensors.

Wafer to wafer bonding apparatus and wafer to wafer bonding method

A substrate bonding apparatus for bonding a first substrate to a second substrate includes a first bonding chuck configured to fix the first substrate to a first surface of the first bonding chuck; a second bonding chuck configured to fix the second substrate to a second surface of the second bonding chuck, the second surface facing the first surface; a process gas injector surrounding at least one selected from the first bonding chuck and the second bonding chuck in a plan view, the process gas injector configured to inject a process gas between the first substrate and the second substrate when respectively disposed on the first bonding chuck and the second bonding chuck; and an air curtain generator disposed at an outside of the process gas injector in the plan view, the air curtain generator configured to inject an air curtain forming gas to form an air curtain surrounding the first substrate and the second substrate.

Substrate bonding apparatus

A substrate bonding apparatus includes a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base and configured to support the first substrate and configured to be deformed such that a distance between the first base and the first deformable plate is varied, and a first piezoelectric sheet on the first deformable plate and configured to be deformed in response to power applied thereto to deform the first deformable plate.

Substrate bonding apparatus and method of manufacturing semiconductor device by using the substrate bonding apparatus

A semiconductor device and a semiconductor package, the device including a pad interconnection structure that penetrates a first buffer dielectric layer and a second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin, the pad interconnection structure includes a central part, a first intermediate part surrounding the central part; a second intermediate part surrounding the first intermediate part, and an outer part surrounding the second intermediate part, a grain size of the outer part is less than a grain size of the second intermediate part, the grain size of the second intermediate part is less than a grain size of the first intermediate part, and the grain size of the first intermediate part is less than a grain size of the central part.

Semiconductor device including interconnection structure including copper and tin and semiconductor package including the same

A substrate bonding apparatus for bonding a first substrate to a second substrate includes: a first bonding chuck including: a first base; a first deformable plate provided on the first base to support the first substrate; and a first pneumatic adjustor configured to deform the first deformable plate by adjusting a first pressure in a first cavity formed between the first deformable plate and the first base; and a second bonding chuck including: a second base; a second deformable plate provided on the second base to support the second substrate; and a second pneumatic adjustor configured to deform the second deformable plate by adjusting a second pressure in a second cavity formed between the second deformable plate and the second base. The first deformable plate is deformed such that a first distance between the first base and the first deformable plate is varied based on the first pressure, and the second deformable plate is deformed such that a second distance between the second base the second deformable plate is varied based on the second pressure.

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Seoul, South Korea

Hoechul Kim