Skhynix Inc.

Gct Semiconductor, Inc.

Hoe-Sam Jeong

Hyeon-June Kim

Won-Seok Lee

Kyeongho Lee

Joonbae Park

Min-Seok Shin

Seung-wook Lee

Seung-Wook Lee

Provided are devices having a device including a ramp signal generator which may comprise: a slope control circuit configured to generate a controllable analog reference voltage according to a digital setting code value to control a slope of a ramp signal; and at least one unit current cell configured to adjust the slope of the ramp signal by adjusting a current flowing through the at least one unit current cell according to the controllable analog reference voltage generated by the slope control circuit.

Ramp signal generator and CMOS image sensor using the same

Provided are devices having a ramp signal generator for adjusting a slope of a ramp signal by adjusting a current of a unit current circuit to adjust a step size. The ramp signal generator may include a unit current circuit including one or more current paths that allow a flow of an electrical current generated based on a ramp supply voltage, and a slope adjustment circuit configured to adjust a slope of a ramp signal by changing a current path of the electrical current flowing through the one or more current paths of the unit current circuit.

A comparison device includes a comparison circuit including input ports to receive a pixel signal and a ramp signal, respectively, and structured to compare the pixel signal and the ramp signal to output a comparison signal; a sensing circuit coupled to the comparison circuit and structured to sense a common voltage variation amount from the comparison circuit, wherein the common voltage variation amount depends on the pixel signal such that the common voltage variation amount increases as the pixel signal increases; and a tail current control circuit coupled to the sensing circuit and structured to control a tail current amount of the comparison circuit based on the common voltage variation amount.

Comparison device and CMOS image sensor including the same

A data readout apparatus may include a comparison circuit structured to compare a pixel signal with the ramp signal to generate a comparison result, a counter array structured to receive the comparison results to count up with each clock pulse from a first timing until a second timing to convert a counted number of clock pulses into differential data and output the differential data through differential data lines, and a sense amplifier array structured to receive the differential data to sense and amplify the differential data based on a judge clock. The sense amplifier array can include a replica delay structured to delay the judge clock and the precharge pulse signal based on a read out timing and read out the data from the counter array at the read out timing.

High-speed data readout apparatus and CMOS image sensor using the same

A variable gain, low noise amplifier is described, which is suitable as the input amplifier for a wireless terminal, or as the pre-amplifier stage of a wireless terminal transmitter. The amplifier may achieve variable gain by deploying a network of transistors in a parallel array, each independently selectable by a PMOS switch, and providing the variable resistance for the resonant circuit. Power dissipation can also be mitigated by using a network of driving transistors, each independently selectable by a PMOS switch. The resonant frequency of the amplifier may be made tunable by providing a selection of optional pull-up capacitors.

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Seoul, South Korea

Hoe-Sam Jeong