Mitsubishi Electric Corporation

Hodaka Rokubuichi

Kei Yamamoto

Kiyofumi Kitai

Yasuyuki Sanda

Satoshi Kondo

Dai Nakajima

Haruna Tada

Kuniyuki Sato

Hiroshi Yoshida

Junji Fujino

Shinya Yano

Ken Sakamoto

Hidetoshi Ishibashi

Seiki Hiramatsu

Masaki Goto

Yusuke Ishiyama

Shota Morisaki

Yusuke Kaji

Nobuhiro Asaji

Yoichi Goto

Hayato Terada

Wakana Noboru

A semiconductor device includes: a semiconductor element, a first lead frame, a second lead frame, and a thermally conductive member; and a sealing member sealing them. The first lead frame includes: a first portion exposed from a first side surface of the sealing member; and a second portion located closer to a lower surface of the sealing member than the first portion in a second direction crossing the lower surface. The semiconductor device further includes an intermediate frame which is located between the second portion and the fifth portion at least in the second direction. A distance, in the first direction, between the second portion and the intermediate frame is shorter than a distance, in the second direction, between an upper surface of the first portion and the upper surface of the second portion.

Semiconductor device and power converter

A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.

Power semiconductor device and method of manufacturing the same, and power conversion device

A highly reliable semiconductor device and power conversion device are obtained. In the semiconductor device, a semiconductor element is mounted on a main surface of a base member. A case includes a side wall surrounding the base member. A support portion is formed on an inner peripheral surface of the side wall on a side of the base member. At least a part of the support portion is in contact with a contact region located inside an outer peripheral end of wiring board on a surface of the wiring board located on the side of the semiconductor element. A sealing member seals the semiconductor element and the wiring board. A terminal member is connected to a region of the wiring board closer to the outer peripheral end than the contact region. The terminal member includes an end portion protruding from a surface of the sealing member.

Semiconductor device and power conversion device

A semiconductor device includes a heat sink, an insulating layer, a lead frame, a power semiconductor element, a sealing resin, and fins. The heat sink has a first main surface and a second main surface opposed to each other. A lead frame including a lead terminal is disposed on the first main surface of the heat sink with the insulating layer interposed. The power semiconductor element is mounted on the lead frame. The sealing resin is formed to cover an inside region located inside of an outer peripheral region located around the entire periphery along the outer periphery of the first main surface of the heat sink. A first depression is formed along the sealing resin in the outer peripheral region of the first main surface.

Semiconductor device and method of manufacturing the same, and power conversion device

A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

Semiconductor apparatus, manufacturing method for semiconductor apparatus, and power converter

A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.

A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.

Semiconductor module

A semiconductor device and a semiconductor module which can be reduced in size while ensuing insulation are provided. In the semiconductor device, a lead frame on which a circuit pattern is formed is provided on an insulation substrate; the circuit pattern of the lead frame is joined to the back-side electrode of a semiconductor chip via a solder layer, and the lead frame is electrically connected with the top-side electrode of the semiconductor chip via a wire; the lead frameincludes a terminal inside a mold-sealing resin and a terminal exposed to a space outside the mold-sealing resin, and the terminal is connected to a terminal block via a solder layer; and the lead frame, the insulation substrate, the semiconductor chip and the terminal block are integrally molded and sealed by the mold-sealing resin.

Semiconductor device and semiconductor module with a highest portion of a terminal lower than a highest portion of the mold sealing resin

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Semiconductor device and method for manufacturing the same

A semiconductor device includes an insulating substrate, a semiconductor element, a conductor substrate, and a case member. The semiconductor element is connected above the insulating substrate, and the conductor substrate is connected above the semiconductor element. The case member surrounds a region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region. A plurality of metal patterns are arranged on a main surface of an insulating layer. A groove is formed between a pair of adjacent metal patterns of the plurality of metal patterns. A through hole is formed in the conductor substrate at a position overlapping with the groove in plan view.

Semiconductor device and method for manufacturing the same, and power conversion device

A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

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Tokyo, Japan

Hodaka Rokubuichi