Alcatel Lucent

Lucent Technologies Inc.

Alcatel-lucent USA Inc.

Hock Min Ng

Aref Chowdhury

Richart Elliott Slusher

Edward L Sutter

Alfred Yi Cho

Claire F Gmachl

Federico Capasso

Deborah Lee Sivco

Bernard Yurke

Brijesh Vyas

Robert Eugene Frahm

Richard Abbot

Rafaelle Colombelli

Richard Elliott Slusher

An apparatus, a method of providing scenes on a display and an immersive viewing system is disclosed. In one embodiment, the apparatus includes: (1) a movement detector configured to monitor movement of a user with respect to a display, wherein the movement detector is disengaged from the user and includes a distance sensor configured to detect a distance of the user from the display and (2) an active screen displayer configured to navigate an active scene on the display based on changes in the distance and dynamically provide an updated view of the active scene on the display based thereon.

Immersive viewer, a method of providing scenes on a display and an immersive viewing system

First image data representing a first view, captured by a camera system, of a second location, is displayed at the first location. The first view is associated with a first orientation relative to the second location. A first angular displacement associated with a motion of a chair disposed at the first location is determined. Information representing the first angular displacement is transmitted to the camera system. Second image data representing a second view of the second location associated with a second orientation is displayed at the first location, the second orientation having a relationship to the first orientation based on the first angular displacement.

Method and system for controlling an imaging system

An exemplary method of determining location information includes sensing a temperature of an object or person in a sensing field of at least one temperature sensor at each of a plurality of measurement periods. A relationship between the sensed temperature at a first one of the measurement periods and the sensed temperature at a second, later one of the measurement periods is determined. A determination is made from the determined relationship whether the object or person moved relative to the temperature sensor during a time from the first one of the measurement periods to the second one of the measurement periods.

Temperature based location determination system and method

Methods, apparatuses and computer-readable media for creating a spatial bookmark are provided. A method includes performing an action at a near location which causes a spatial bearing parameter corresponding to a real-time video image captured by a video-camera platform at a remote location to be stored in a computer-readable memory, wherein the video-camera platform has a controllable LOS. Performing an action at the near location that designates to a computer an image displayed on a screen, wherein the image is representative of the real-time video image, thereby causing the computer to retrieve the spatial bearing parameter from the computer-readable memory, and performing an action causing the computer to aim the video-camera platform along a LOS, wherein the video-camera platform captures a real-time video image that is received at a screen for display at the near location.

Spatial bookmarking

An audio locating and tracking apparatus, a method of directing a camera to view an audio source, and a video conferencing terminal are disclosed herein. In one embodiment, the apparatus includes: (1) an audio source identifier configured to locate an audio source based on multimodal sensor data from at least two different types of sensors and (2) an image selector configured to automatically direct a camera to view the audio source.

Audio source locator and tracker, a method of directing a camera to view an audio source and a video conferencing terminal

A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

Group III-nitride layers with patterned surfaces

An apparatus includes a substrate and a plurality of DNA oligomers in contact with a top surface of the substrate. The substrate is a polar ferroelectric or a polar compound semiconductor.

DNA structures on ferroelectrics and semiconductors

An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape.

Light-emitting crystal structures

A devicecomprising a substratehaving crystal-support-structuresthereon, and a III-V crystal. The III-V crystal is on a single contact regionof one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface areaof the III-V crystal.

Wide-bandgap semiconductor devices

An apparatus includes an optical waveguide and an optical filter positioned to receive light from the optical waveguide. The optical waveguide includes a sequence of alternating first and second stripes. The sequence runs along a propagation direction in the optical waveguide. The first and second stripes are formed of different polarization states of a group III-nitride semiconductor. The optical filter removes light of a preselected frequency.

Optical frequency-converters based on group III-nitrides

An apparatus includes a crystalline substrate, a layer of a first group III-nitride located on a planar surface of the substrate, and a layer of a second group III-nitride located over the layer of the first group III-nitride. The first and second group III-nitrides have different alloy compositions. The layer of second group III-nitride may have a pattern of columnar holes or trenches therein. The apparatus may include a plurality of pyramidal field-emitters that include the second group III-nitride.

A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier.

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Westfield, NJ, United States of America

Hock Min Ng