United Microelectronics Corp.

Hock-Chun Chin

Hong Liao

Chao Jiang

Chow-Yee Lim

Lan-Xiang Wang

A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first dielectric layer, a charge trapping layer, a ferroelectric material layer, and a gate layer. The first dielectric layer is disposed on the substrate, the charge trapping layer is disposed on the first dielectric layer, the ferroelectric material layer is disposed on the charge trapping layer, and the gate layer is disposed on the ferroelectric material layer.

Growing community of inventors

Singapore, Singapore

Hock-Chun Chin