Taiwan Semiconductor Manufacturing Comp. Ltd.

Hobin Chen

Chien-Hung Chen

Cherng-Chang Tsuei

Wen-Lang Wu

Shen-Chieh Liu

Shao-Yen Ku

Chun-Li Chou

Tsai-Pao Su

Yu-Yen Hsu

Sheng-Chi Shih

Chi-Yun Tseng

A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.

Semiconductor structure and manufacturing method thereof

A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.

Semiconductor device and method of manufacture

Growing community of inventors

Changhua County, Taiwan

Hobin Chen