Motorola Corporation

International Business Machines Corporation

High Yield Technology

Hoang K Nguyen

Bich-Yen Nguyen

Peter G Borden

Philip J Tobin

Young Limb

Jen-Jiang Lee

Joseph M Draina

Earl J Carrasco

A structure and an apparatus are provided for use in particle sensor installed to monitor particle level of a process chamber. The process chamber receives process gas from a supply line and removes gas through an exhaust line. The particle sensor's optical components are prevented from contamination by corrosive or coating species in the effluent from the process, by a gas purge line installed in the particle sensor. The gas purge line allows a flow of gas to purge the optical components at a flux not less than the flux of gas being removed from the process chamber in the exhaust line. The flux out of the particle sensor prevents the undesired species from reaching the optical components of the particle sensor from the sampling area where the particle sensor detects the particle level.

Structure and method for providing a gas purge for a vacuum particle

A molecular restricter for inhibiting or preventing gas molecules from flowing past a point, such as a piece of optical equipment, substantially without inhibiting particles mixed therewith from passing therethrough is described. The molecular restricter has a plurality of elongated cells with each end open to permit the particles to pass through. However the width of the cell must be less than the mean free path .gamma. of the molecules under the conditions the restricter is to be used with. In one embodiment, the length of the cell is at least ten times longer than its width. The cells are arranged adjacent to each other and in parallel orientation. The walls of each cell must also be parallel to permit free transmission of the particles or light therethrough.

Molecular restricter

A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.

Process for forming high purity thin films

Growing community of inventors

Austin, TX, United States of America

Hoang K Nguyen