Osram Opto Semiconductors Gmbh

Intersil Americas Inc.

Silicon Storage Technology, Inc.

Hoa Vu

Hubert Halbritter

Thomas Schwarz

Peter Brick

Kilian Regau

Laura Kreiner

Jens Richter

Thorsten Frank Baumheinrich

Paul Ta

Bhupendra K Ahuja

Jean-Jacques Drolet

Christopher Soell

Patrick Hoerner

Jong Park

Kanishk Chand

Hieu Van Tran

Thuan Vu

Stanley Hong

Stephen Trinh

Hien Pham

Christopher Wiesmann

Andrey Lysov

Nghia Le

Duc Nguyen

Teck-Boon Serm

Carlos A Laber

Ping Y Huang

In one example, a system comprises a current-to-voltage converter to generate differential voltages from differential currents comprising a first current and a second current, the current-to-voltage converter comprising: a first bitline to provide the first current; a second bitline to provide the second current; a first regulator to apply a first voltage to the first bitline; a second regulator to apply a second voltage to the second bitline; a regulating circuit comprising a first input terminal, a second input terminal, a first output terminal, and a second output terminal, the first output terminal and the second output terminal providing the differential voltages; and a common mode circuit.

Current-to-voltage converter comprising common mode circuit

In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns, the array comprising a first bit line coupled to a first column of non-volatile memory cells and a second bit line coupled to a second column of non-volatile memory cells; and an output block coupled to the array, the output block comprising: a current-to-voltage converter to convert a first current on the first bit line into a first voltage and to convert a second current on the second bit line into a second voltage; and an analog-to-digital converter to convert one or more of the first voltage and the second voltage into a set of output bits.

Output block for array of non-volatile memory cells

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

A device for cancelling undesired fractions in a detected signal may include a first region having an output node and including a light sensitive sensor configured to detect a first signal and an analogue to digital converter coupled to the output node. A second region may be switchably coupled to the first region based on a first control signal to the first region. The second region may include a storage device configured to store a signal based on the detection of the first signal. The second region may include an output node coupled to the sensor. The second may be configured to provide a compensation signal based on the stored signal to the light sensitive sensor during detection of a second signal.

Ambient light and noise cancelling device

An ambient light detector, a detector array and a method are disclosed. An ambient light sensor includes a first plurality of sensor elements, where each sensor element is configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, where the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and where a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

Ambient light detector, detector array and method

An ambient light detector, a detector array and a method are disclosed. In an embodiment an ambient light sensor includes a first plurality of sensor elements, each sensor element configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, wherein the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and wherein a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

A method for controlling performance of an integrated circuit using a zero-pin serial interface is provided. The method comprises identifying a desired performance characteristic of the circuit, and transmitting a first change mode signal to the circuit on a first pin to cause the circuit to enter an instruction reception mode, with the first pin performing differently during a normal operation mode. The method also comprises transmitting a performance adjusting instruction to the circuit on a second pin when the circuit is in the instruction reception mode, with the second pin performing differently during the normal operation mode, and transmitting a second change mode signal to the circuit on the first pin to cause the circuit to enter the normal operation mode. An output performance of the circuit is compared to the desired performance characteristic, with the output performance being the performance of the circuit during the normal operation mode. The circuit is set to permanently provide the output performance when the output performance is within a desired tolerance of the desired performance characteristic.

Zero pin serial interface

An automatic temperature compensated real-time clock (RTC) chip includes a clock portion having a crystal oscillator block including crystal compensation circuitry adapted to be coupled to a crystal. The crystal compensation circuitry includes a non-linear capacitor DAC including a plurality of load capacitors, wherein the load capacitors have respective switches which switch respective ones of the load capacitors to change a parallel resonance frequency (fp) generated by the oscillator block. The capacitor DAC is arranged so that Analog Trimming (ATR) bits received cause an arrangement of the switches to provide a non-linear change in overall load capacitance to result in a linear relationship between fp and the ATR bits. A temperature sensor block is coupled to the crystal for measuring a temperature of at least the crystal. An A/D converter is coupled to the temperature sensor for outputting a digital temperature signal representative of the temperature of the crystal. A DSP engine receives the digital temperature signal and calculates frequency correction needed to correct for frequency inaccuracy and determines a bit sequence including the ATR bits appropriate to achieve the frequency correction.

Automatic circuit and method for temperature compensation of oscillator frequency variation over temperature for a real time clock chip

A circuit and corresponding method for a precision floating gate voltage reference that uses a feedback loop, conduction of tunnel devices, and a bandgap cell to accurately program a desired charge level on a floating gate and provide a predictable and programmable temperature coefficient parameter for such voltage reference. In one embodiment, a bandgap cell is coupled through a capacitor to the floating gate storage node for providing a voltage source for canceling the temperature coefficient (TC) of the storage capacitor. The circuit and method enables TC to be minimized by either choosing the proper voltage source characteristics or alternatively, by choosing the proper ratio of two capacitors. The bandgap cell can alternatively be designed to have positive TC (PTAT voltage sources) or negative TC (VBE junction).

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Milpitas, CA, United States of America

Hoa Vu