Skhynix Inc.

Ho Young Kwak

Jong Eun Kim

Hyung June Yoon

Hoon Moo Choi

Jae Won Lee

Dong Jin Lee

Nam Il Kim

Jong Chae Kim

An image sensing device is provided to include: a substrate having a first surface on which light is incident and a second surface facing the first surface; a plurality of detection structures, each comprising a control node configured to exhibit a conductivity type and generate a potential gradient in the substrate, and a detection node configured to capture photocharge which is generated in response to incident light and migrates in response to the potential gradient; and a first well area disposed to abut the control nodes of the plurality of detection structures and containing an impurity with a different conductivity type from the conductivity type of the control nodes.

Image sensing device

An image sensing device includes a first substrate layer including first conductive impurities and structured to produce photocharges based on the incident light and capture the photocharges using a voltage difference induced in response to a demodulation control signal; a second substrate layer including second conductive impurities having characteristics opposite to those of the first conductive impurities, and structured to be bonded to the first substrate layer; and a depletion layer formed between the first substrate layer and the second substrate layer.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate configured to generate charge carriers in response to light incident, a plurality of control regions supported by the semiconductor substrate and configured to cause majority carrier currents in the semiconductor substrate to control movement of minority carriers, and a plurality of detection regions formed adjacent to the control regions and configured to capture the minority carriers moving in the semiconductor substrate. Each of the control regions includes an upper portion, a lower portion, and a middle portion disposed between the upper portion and the lower portion. The middle portion has a smaller horizontal cross-sectional profile than each of the upper portion and the lower portion.

An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

An image sensing device including a noise blocking structure is disclosed. The image sensing device includes a semiconductor substrate structured to support a plurality of image pixels producing signals upon a detection of an incident light and a logic circuit configured to process signals produced by the image pixels are formed, and a noise blocking structure disposed at the semiconductor substrate and formed to surround the logic circuit is formed. The noise blocking structure includes a first blocking structure and a second blocking structure. The first blocking structure includes multiple portions spaced from one another, each of the multiple portions extending in a line without any bending portion. The second blocking structure are disposed between the multiple portions of the first blocking structure and include portions partially overlapping with the first blocking structure.

Image sensing device including noise blocking structure

An image sensing device including a noise blocking structure is disclosed. The image sensing device includes a semiconductor substrate structured to support a plurality of image pixels producing signals response to received incident light, a logic circuit configured to process the signals read out from the image pixels, and a noise blocking structure coupled to the logic circuit to reduce a noise generated by the logic circuit. The noise blocking structure formed to extend in a straight line without any bending portion in a first direction, and to pass through the semiconductor substrate in a second direction that is perpendicular to the first direction.

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Cheongju-si, South Korea

Ho Young Kwak