Seoul Semiconductor Co., Ltd.

Hongik University Industry-academia Cooperation Foundation

Ho Young Cha

Young Do Jong

Jae Gil Lee

June Sik Kwak

Kwan Hyun Lee

Jongik Kang

Bong Ryeol Park

Disclosed is a quenching circuit including an avalanche photodiode and a quenching diode applying a bias voltage to the avalanche photodiode. Since the quenching circuit includes the quenching diode instead of a quenching resistor, the avalanche photodiode can quickly recover to linear mode from Geiger mode, and the bias voltage applied to the avalanche photodiode is stably maintained even though a current level of the avalanche photodiode fluctuates according to the intensity of incident light.

Quenching circuit

Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

Nitride semiconductor device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Ho Young Cha