Electro Scientific Industries, Inc.

Other

Ho Wai Lo

Kelly Bruland

Brian W Baird

Stephen Neal Swaringen

Brady Nilsen

Frank G Evans

Mark Alan Unrath

David Martin Hemenway

Mehmet Emin Alpay

Richard S Harris

Jan Kleinert

Kurt M Eaton

Clint R Vandergiessen

James Brookhyser

Keith Grant

Qian Xu

Zhibin Lin

Corey M Dunsky

Guang Lu

Mike Tyler

Xinbing Liu

Yunlong Sun

Hisashi Matsumoto

Bryan C Gundrum

Nicholas J Croglio

Douglas Earl Holmgren

Jay Johnson

Jonathan R Biles

Spencer Barrett

Joel C Johnson

Robert Hainsey

Donald R Wilt

Terri J Irland

Raman Sudhakar

Jim Brookhyser

David Rowley

Philip Mitchell Conklin

Ken Whiteman

One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Multi-axis machine tool and methods of controlling the same

Systems and methods for enabling automated motion control of a tool in a multi-axis machine tool

A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

On-the fly laser beam path dithering for enhancing throughput

Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Methods and systems for semiconductor structure processing using multiple laser beam spots

On-the-fly laser beam path error correction for specimen target location processing

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously

A system determines relative positions of a semiconductor substrate and a plurality of laser beam spots on or within the semiconductor substrate in a machine for selectively irradiating structures on or within the substrate using a plurality of laser beams. The system comprises a laser source, first and second laser beam propagation paths, first and second reflection sensors, and a processor. The laser source produces at least the first and second laser beams, which propagate toward the substrate along the first and second propagation paths, respectively, which have respective first and second axes that intersects the substrate at respective first and second spots. The reflection sensors are positioned to detect reflection of the spots, as the spots moves relative to the substrate, thereby generating reflection signals. The processor is configured to determine, based on the reflection signals, positions of the spots on or within the substrate.

Systems and methods for distinguishing reflections of multiple laser beams for calibration for semiconductor structure processing

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Semiconductor structure processing using multiple laser beam spots

A method of and system for forming two laser processing beams with controlled stability at a target specimen work surface includes first and second mutually coherent laser beams propagating along separate first and second beam paths that are combined to perform an optical property adjustment. The combined laser beams are separated into third and fourth laser beams propagating along separate beam paths and including respective third and fourth main beam components, and one of the third and fourth laser beams contributes a leakage component that copropagates in mutual temporal coherence with the main beam component of the other of the third and fourth laser beams. An effect of mutual temporal coherence of the leakage component and the other main beam component with which the leakage component copropagates is reduced through acousto-optic modulation frequency shifts or through incorporation of an optical path length difference in the two beams.

Reducing coherent crosstalk in dual-beam laser processing system

Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.

Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows

Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.

Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure

Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.

Back side wafer dicing

Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset

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Portland, OR, United States of America

Ho Wai Lo