Ltc Co., Ltd.

Other

Ho Sung Choi

Jun Young Kim

Hwa Young Kim

Jong Soon Lee

Kwang Hyun Ryu

Sang Ku Ha

Seon Jeong Kim

Yeon Soo Choi

Sang Hun Cho

Byeong Woo Jeon

Yun Mo Yang

Jong Il Bae

Ki Cheon Byun

Hye Sung Yang

Kyu Sang Kim

The present invention relates to a photoresist stripper composition for manufacturing a display, and more particularly, to an integrated photoresist stripper composition which can be used in every process for manufacturing a display. More specifically, the photoresist stripper composition for manufacturing a display according to the present invention can be applied to all of transition metals and oxide semiconductor wirings, and has an excellent ability to remove modified photoresist after a hard bake process, and implant process, and a dry etch process have been performed. In particular, the photoresist stripper composition for manufacturing a display according to the present invention exhibits a corrosion inhibitory effect that has been further specialized for copper (Cu) wiring pattern edge portions which are susceptible to corrosion following dry-etching.

Photoresist stripper composition for manufacturing display

The present invention relates to a polysilsesquioxane resin composition for a flexible substrate. More specifically, the present invention relates to a polysilsesquioxane resin composition for a flexible substrate, having excellent heat resistance and transparency, the resin composition being usable for a flexible display substrate. More specifically, a transparent thin film can be formed, excellent transmittance is exhibited in the visible range even after curing, heat resistance is excellent, and flexibility and crack resistance can be controlled. Compared to a conventional polyimide-based substrate material, the present invention has excellent insulation characteristics and passivation characteristics, which can be satisfied simultaneously, and is advantageous for productivity since release characteristics are ensured during a delamination process from a glass substrate.

Polysilsesquioxane resin composition for flexible substrate

The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.

Highly heat resistant polysilsesquioxane-based photosensitive resin composition

The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.

Photoresist stripping composition for manufacturing LCD

The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.

Composition for removing and preventing formation of oxide on the surface of metal wire

A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added. The photoresist residue removal composition has a high capability to remove residues caused by plasma etching and ashing of a metal or silicon oxide layer under a photoresist pattern, does not cause corrosion, and is eco-friendly.

Growing community of inventors

Gyeonggi-do, South Korea

Ho Sung Choi