Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Sumitomo Electric Industries, Limited

Ho Sun Paek

Hyung Kun Kim

Hak Hwan Kim

Jeong Wook Lee

Suk Ho Jung

Young Jin Lee

Youn Joon Sung

Tan Sakong

Suk Ho Yoon

Ho Young Song

Jae Sung You

Cheol Soo Sone

Sung Nam Lee

Jong In Yang

Won Hoe Koo

Jae Chul Kim

Il Hyung Jung

Jung Tae Ok

Sung Kyong Oh

Yun Tae Hwang

Ten Sakong

Jun Bum Lee

Kwon Joong Kim

In Hoe Hur

A light emitting diode (LED) module includes: a flexible substrate having a first surface on which a circuit pattern is disposed, and a second surface opposite the first surface; a plurality of light emitting diode (LED) chips mounted on the first surface of the flexible substrate, and electrically connected to the circuit pattern; an insulating reflective layer disposed on the first surface of the flexible substrate, and covering a portion of the circuit pattern; first and second connection terminals disposed at both ends of the flexible substrate, and connected to the circuit pattern; and a wavelength conversion layer covering the plurality of LED chips and surrounding the flexible substrate in a cross-sectional view.

LED module and LED lamp including the same

A white LED module includes a circuit board, at least one first LED light source on the circuit board and emitting a first white light having a first color temperature, at least one second LED light source on the circuit board and emitting a second white light having a second color temperature, higher than the first color temperature, a wiring structure in the circuit board to selectively drive the at least one first LED light source and the at least one second LED light source, and a transparent encapsulant on the circuit board, to cover the at least one first LED light source and the at least one second LED light source. The transparent encapsulant includes a transparent resin and a light-scattering powder in the transparent resin.

White light emitting diode module and lighting apparatus

A bump manufacturing method may be provided. The bump manufacturing method may include forming a bump on an electrode pad included in a semiconductor device, and controlling a shape of the bump by reflowing the bump formed on the semiconductor device under an oxygen atmosphere.

Method of manufacturing bump

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

Light emitting device and method of manufacturing the same

Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.

Light emitting diode package

There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InGaN, where 0&#x3c;x&#x3c;0.2, and GaN; a well layer including InGaN, where 0&#x3c;x&#x3c;1; a third barrier layer including one of InGaN, where 0&#x3c;x&#x3c;0.2 and GaN; and a lattice mismatch relaxation layer including one of AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, AlGaN, where 0&#x3c;x&#x3c;1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.

GaN-based semiconductor light emitting device

An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Led package module

There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Semiconductor light emitting device and method of manufacturing the same

An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. Accordingly, a reduction in luminous efficiency of an LED caused by yellowing is prevented to thereby increase luminous efficiency and achieve a reduction in size.

LED package module

Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.

Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode

There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.

Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device

There is provided an LED package having high heat dissipation efficiency. An LED package according to an aspect of the invention may include: a package body including a first groove portion being recessed into the package body and provided as a mounting area on the top of the package body; first and second lead frames arranged on a lower surface of the first groove portion while parts of the first and second lead frames are exposed; an LED chip mounted onto the lower surface of the first groove portion and electrically connected to the first and second lead frames; and a plurality of heat dissipation patterns provided on the bottom of the package body and formed of carbon nanotubes.

The present invention provides an LED package including: a heat discharge body provided with a plurality of radially protruding heat discharge fins at an outer circumferential surface and molding material filled spaces between the heat discharge fins; a package body which is received on a top surface of the heat discharge body and has a cavity; a pair of lead frames extended from upper parts of the heat discharge body to both sides thereof; and an LED chip mounted inside the cavity.

LED package

A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (112) plane.

Growing community of inventors

Gyunggi-do, South Korea

Ho Sun Paek