Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Korea University Industrial Academic Collaboration Foundation

Yonsei University

Ho Soo Park

Duck Hwan Kim

Jea Shik Shin

Sang Uk Son

In Sang Song

Moon Chul Lee

Chul Kyu Kim

Chul Soo Kim

Yeong Gyu Lee

Jing Cui

Cui Jing

Byeong Kwon Ju

Jae-Sung Rieh

Moon Chui Lee

Jie Ai Yu

Jae Shik Shin

Seong Chan Jun

Jae Chun Lee

Dong Hoon Hwang

Dal Ahn

Young Gyu Lee

Duck Whan Kim

Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Bulk acoustic wave resonator

An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Acoustic wave resonator and filter including the same

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

Acoustic resonator and method of manufacturing the same

A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.

Thin film bulk acoustic resonator and method for manufacturing same

An acoustic resonator is provided in which loss of acoustic waves in a transverse direction may be reduced through a cavity formed in an acoustic resonance unit including a first electrode, a piezoelectric layer, and a second electrode, and in which acoustic waves in a longitudinal direction may be reduced by forming an air gap between the acoustic resonance unit and a substrate. Whereby, a quality factor may be improved.

A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

Bulk acoustic wave resonator having a frame spaced apart from an electrode

A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.

Method of measuring biological sample properties and biological sample property measuring apparatus

A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.

Radio frequency filter and manufacturing method thereof

There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.

A filter using bulk acoustic wave resonators (BAWRs) is provided including BAWRs connected in series or in parallel to each other. A BAWR set is configured by connecting an inductance and capacitance (L/C) element to each BAWR in series or in parallel.

Filter using BAWRs and L/C elements connected to the BAWRs

A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.

Apparatus and method for fabricating nano resonator using laser interference lithography

An acoustic filter includes a signal input port, a ladder-type filter, a first branch ladder-type filter, a second branch ladder-type filter, and a signal output port. The first branch ladder-type filter and the second branch ladder-type filter are connected in parallel to each other. The signal input port is connected to the ladder-type filter. The ladder-type filter circuit is connected in series to the first branch ladder-type filter and the second branch ladder-type filter. The first branch ladder-type filter circuit and the second branch ladder-type filter are connected to the signal output port.

Acoustic filter with suppressed nonlinear characteristics

A nano resonance apparatus includes a gate electrode configured to generate a magnetic field, and a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field. The nanowire includes a protruding portion extending in a direction of the gate electrode.

Nano resonance apparatus and method

Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.

Growing community of inventors

Yongin-si, South Korea

Ho Soo Park