Applied Materials, Inc.

Ho Seon Shin

Ratson Morad

Robin W Cheung

Igor G Kogan

Yezdi N Dordi

Dan A Marohl

Donald J Olgado

Avi Tepman

Ashok K Sinha

Michael N Sugarman

Joseph Stevens

Mark Robert Denome

Peter W Hey

Dan Carl

George Birkmaier

Eugene Ravinovich

Gary C Ettinger

Mark Lloyd

Songjae Lee

Liang-Yuh Chen

Wei-Yung Hsu

Sen-Hou Ko

Donald J K Olgado

Sandy Shih-Hsun Chao

Michael E Khau

B Michelle Chen

Erik C Wasinger

Anna Marie Lloyd, Legal Representative

In a first aspect, a method of drying at least a portion of a substrate located within a fluid is provided. The method includes contacting an edge of the substrate that is located within the fluid with a pusher pin. The pusher pin has (a) a shaft portion; and (b) a tip portion having a knife edge of a width of 0.42 inches or less, the tip portion adapted to contact and support the substrate with the knife edge. The method further includes lifting the substrate from the fluid with the pusher pin; and exposing the substrate to a drying vapor as the substrate is lifted from the fluid. Numerous other aspects are provided.

Methods and apparatus for drying a substrate

Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Methods and apparatus for processing a substrate

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Electro-chemical deposition system

In a first aspect, a valve assembly is provided that includes a valve assembly output adapted to output at least one of DI water and a chemical. A first valve of the valve assembly includes (1) a first input adapted to receive the chemical; (2) a first output adapted to circulate the chemical to a chemical return; and (3) a second output adapted to output the chemical to the valve assembly output. The valve assembly also includes a second valve positioned downstream from the first valve. The second valve includes (1) an input adapted to receive deionized (DI) water; and (2) an output adapted to output DI water to the valve assembly output. A check valve is coupled between the second output of the first valve and the output of the second valve, and the first valve, second valve and check valve are included in a single manifold.

Methods and apparatus for providing fluid to a semiconductor device processing apparatus

A method and apparatus for the delivery of slurry solution comprising an ultrasonic flow meter positioned between a fluid preparation manifold and a slurry delivery arm, and a shutoff valve positioned between a proportional valve and the slurry delivery arm. Also, a method and apparatus for the delivery of slurry solution including an ultrasonic flow meter positioned to receive fluid from a fluid preparation manifold, a proportional valve and stepper motor in communication with the flow meter, and a reverse flow restrictor in communication with the proportional valve and a slurry delivery arm.

Bubble suppressing flow controller with ultrasonic flow meter

A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.

Method and apparatus for annealing copper films

A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.

Method and apparatus for heating and cooling substrates

A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.

System architecture of semiconductor manufacturing equipment

Method for heating and cooling substrates

A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer load lock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than wafers per hour.

A method and apparatus for heating and cooling a substrate. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.

A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto. The chamber preferably includes a pump adapted to evacuate the chamber to a predetermined pressure during at least cooling. A method for heating and cooling a substrate also is provided.

Growing community of inventors

Cupertino, CA, United States of America

Ho Seon Shin