Cebt Co., Ltd.

Industry-University Cooperation Foundation Sunmoon University

Other

Electronics and Telecommunications Research Institute

Ho Seob Kim

Dae Wook Kim

Tae Sik Oh

Byeng Jin Kim

Jin Woo Jeong

Dae Yong Kim

Dae Jun Kim

Sang Kuk Choi

Seung Joon Ahn

Young Chul Kim

Seung Jun Ahn

Do Jin Seong

Seung-Joon Ahn

Hyung Woo Kim

Dae Wook 125-702 Park Town Samik Apt Kim

Disclosed herein is a micro stage using a piezoelectric element that can be reliably operated even in a vacuum environment. In a particle column requiring a high precision, for example, a microelectronic column, the micro stage can be used as a stage with micro or nano degree precision for alignment of parts of the column, or for moving a sample, and so on.

Micro stage for particle beam column using piezo elements as actuator

Disclosed is a micro-electron column including nanostructure tips each of which has a tubular, columnar, or blocky structure ranging in size from several nanometers to dozens of nanometers. In the micro-electron column, the nanostructure tips can easily emit electrons because a high electric field is generated at the end of the nanostructure tips when a voltage is applied to the nanostructure tips, and an induction electrode is disposed between the electron emitter and a source lens so as to help electrons emitted from the electron emitter to enter an aperture of a first lens electrode layer of the source lens, thereby realizing improved performance of the micro-electron column. In the micro-electron column, the size of the nanostructure tips may be larger than that of the aperture of a source lens.

Micro-electron column having an electron emitter improving the density of an electron beam emitted from a nano structure tip

Disclosed is an electrostatic quadrupole deflector for a microcolumn. The deflector includes an electron beam passage hole, deflecting electrodes to which a deflection voltage is applied, and floating electrodes to which the deflection voltage is not applied. The deflector is structurally stable and has a simple driving system. The deflector has good performance and characteristics.

Electrostatic quadrupole deflector for microcolumn

Disclosed herein is a microcolumn with a double aligner. The microcolumn is configured such that when an axis of an aperture of a limiting aperture is spaced apart from an original path of a particle beam, the path of the particle beam can be effectively compensated for in such a way that the path of the particle beam is aligned with the axis of the aperture of the limiting aperture by the double aligner. The microcolumn includes a source lens. The source lens includes at least two aligner layers which compensate for the path of the particle beam.

Micro-column with double aligner

Disclosed is a device for sustaining different vacuum degrees for an electron column, including an electron emitter, a lens part, and a housing for securing them, to maintain the electron column and a sample under different vacuum degrees. The device comprises a column housing coupling part coupled to the housing to isolate a vacuum; a hollow part defined through the center portion of the device to allow an electron beam emitted from the electron column to pass therethrough; and a vacuum isolation part having a structure of a gasket for vacuum coupling, wherein a difference of no less than 10 torr in a vacuum degree is maintained between both sides of the device by selecting an appropriate diameter of a lens electrode layer which is finally positioned in a path along which the electron beam is emitted or by using the hollow part.

Device for sustaining differential vacuum degrees for electron column

Disclosed herein is a multi-particle beam column including electrode layer with eccentric apertures. The multi-particle beam column includes two or more particle beam columns each comprising a particle beam emission source, a deflector, and two or more electrode layers. The multi-particle beam column includes at least one electrode layer having one or more apertures that are eccentric from respective beam optical axes of the particle beam columns.

Multi-particle beam column having an electrode layer including an eccentric aperture

An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.

Ultra-miniaturized electron optical microcolumn

In a conventional micro-channel plate (MCP), a secondary electron (SE) detector or a semi-conductor detector the number of the electrons is amplified through its own structure. For such amplification a small voltage difference is applied externally or generated due to its own structure and material. The electric current of electrons undergoing the above-described procedure is amplified by an external amplification circuit. In the present invention electrons&#x2014;resulting from the collision of the electron beam generated by a microcolumn&#x2014;are detected by surrounding conductive wiring. The detected electrons are amplified using an amplification circuit on the outside similar to a conventional detection method.

Detector for electron column and method for detecting electrons for electron column

Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n&#xd7;m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.

Method for controlling electron beam in multi-microcolumn and multi-microcolumn using the same

The present invention relates, in general, to a deflector for microcolumns for generating electron beams, and, more particularly, to a deflector capable of scanning or shifting electron beams or functioning as a stigmator using a magnetic field. The deflector () according to the present invention includes one or more deflector electrodes. Each of the deflector electrodes includes a core () made of a conductor or a semiconductor, and a coil () wound around the core ().

Magnetic deflector for an electron column

Provided is a portable electron microscope using a microcolumn. The portable electron microscope includes a microcolumn, a low vacuum pump, a high vacuum pump, an ultra-high vacuum ion pump, a first chamber for receiving and fixing the microcolumn and a sample to be measured and forming a vacuum by means of the pumps, a controller, and a case for receiving the pumps, the chamber and the controller.

Portable electron microscope using micro-column

The present invention relates to an electron column including an electron emission source and lenses, and, more particularly, to an electron column having a structure that can facilitate the alignment and assembly of an electron emission source and lenses. The electron column having an electron emission source and a lens unit according to the present invention is characterized in that the lens unit includes two or more lens layers and performs both a source lens function and a focusing function. Furthermore, the electron column is characterized in that the lens unit includes one or more deflector-type lens layers and additionally performs a deflector function.

Micro-column with simple structure

Disclosed herein is an apparatus and method for inspecting the via holes of a semiconductor device using electron beams. The apparatus includes electron beam irradiation means, a current measuring means, and a current measuring means and data processing means. The electron beam irradiation means radiate respective electron beams to inspect a plurality of inspection target holes. The current measuring means measures current, which is generated by irradiating the electron beams, radiated from the electron beam irradiation means, through a conductive layer located under the holes, or through the conductive layer and a separate detector. The data processing means processes data acquired through the measurement of the current measuring means.

Hole inspection apparatus and hole inspection method using the same

Inspection equipment using a microcolumn is disclosed. The inspection equipment of the present invention can conduct inspection of a fine circuit, which could not be conducted using conventional optical inspection equipment. Furthermore, the present invention can rapidly inspect a display, having a relatively large area, and can have a precise inspection function and a repair function. The inspection equipment of the present invention includes a plurality of microcolumns, a shaft, to which the microcolumns are coupled, and which is disposed in a direction perpendicular to a direction in which an object is moved, and a detector for detecting electron beams radiated from the microcolumns onto the object to determine whether errors exist in a circuit of the object.

Inspection equipment for fine pattern and morphology using microcolumn

The present invention relates to a method for improving focusing in an electron column that generates an electron beam. The method for controlling the focusing of an electron beam in according to the present invention reduces the spot size of the electron beam when the electron beam reaches a specimen, so that resolution can be increased and the line width of a pattern in a semiconductor lithography process can be reduced, with the result that the performance of the electron can be improved.

Growing community of inventors

Incheon, South Korea

Ho Seob Kim