Samsung Electronics Co., Ltd.

Ho-Min Son

Jung-Geun Jee

Yong-woo Hyung

Woong Hee Lee

Jae-Jong Han

Won-Jun Jang

Taek-Jin Lim

Sang-Kyoung Lee

Jung-Yoon Ko

A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.

Method of forming nonvolatile memory device having floating gate and related device

A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate.

Non-volatile memory device and method of fabricating the same

In a method of forming a thin layer (e.g., a charge trapping nitride layer) of a semiconductor device (e.g. a charge trapping type non-volatile memory device), the nitride layer may be formed on a first area of a substrate. A blocking layer may be formed on the nitride layer. An oxide layer may be formed on a second area of the substrate while preventing or reducing an oxidation of the nitride layer by a radical oxidation process in which oxygen radicals react with the second area of the substrate and the blocking layer in the first area of the substrate. The nitride layer may ensure sufficient charge trapping sites and may have a uniform thickness without oxidation thereof in the radical oxidation process.

Method of forming a thin layer and method of manufacturing a semiconductor device

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Suwon-si, South Korea

Ho-Min Son